Purchase M36W0R6040T0, In-stock M36W0R6040T0 From SeekIC.
Part Number: M36W0R6040T0
Description: The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-...
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M36W0R6040T0
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DataSheet
General Description
M36W0R6040T0 General Description
The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time.
The memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package. In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free soldering processes.
M36W0R6040T0 Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| Min | Max | |||
| TA | Ambient Operating Temperature | -30 | 85 | °C |
| TBIAS | Temperature Under Bias | -40 | 125 | °C |
| TSTG | Storage Temperature | -65 | 155 | °C |
| TLEAD | Lead Temperature during Soldering | (1) | °C | |
| VIO | Input or Output Voltage | -0.5 | VDDQ+0.6 | V |
| VDDF | Flash Memory Core Supply Voltage | -0.2 | 2.45 | V |
| VDDQ | Input/Output Supply Voltage | -0.2 | 2.45 | V |
| VDDP | PSRAM Supply Voltage | -0.2 | 3.3 | V |
| VPPF | Flash Memory Program Voltage | -0.2 | 14 | V |
| IO | Output Short Circuit Current | 100 | mA | |
| tVPPFH | Time for VPPF at VPPFH | 100 | hours | |
1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
M36W0R6040T0 Features
MULTI-CHIP PACKAGE
1 die of 64 Mbit (4Mb x 16) Flash Memory
1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
SUPPLY VOLTAGE
VDDF = VDDP = VDDQ = 1.7V to 1.95V
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code (Top Flash Configuration), M36W0R6040T0: 8810h
Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h
PACKAGES
Compliant with Lead-Free Soldering Processes
Lead-Free Versions
1 die of 64 Mbit (4Mb x 16) Flash Memory
1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
SUPPLY VOLTAGE
VDDF = VDDP = VDDQ = 1.7V to 1.95V
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code (Top Flash Configuration), M36W0R6040T0: 8810h
Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h
PACKAGES
Compliant with Lead-Free Soldering Processes
Lead-Free Versions
M36W0R6040T0
PDF/DataSheet Download
- Datasheet: M36W0R6040T0
- File Size: 326203 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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M36W0R6040T0 Relative Products
M36W0R6040B0
The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one ...
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The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by two Chip Enable inputs: EF for the Flash memory andEP for the PSRAM.Recommended operating conditions of M36P0R9060N0do not allow more tha...
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