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Description: The M36W108 is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. Th...


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M36W108T General Description


The M36W108 is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0 mm ball pitch and LGA48 1.0 mm land pitch. The two components, of the package's overall 9 Mbit of memory, are distinguishable by use of the three chip enable lines: EF for the Flash memory, E1S and E2S for the SRAM.

The Flash memory component is identical with the M29W008 device. It is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCCF supply.

For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming, Block

M36W108T Maximum Ratings

Symbol Parameter Value Unit
TA Ambient Operating Temperature (3) 40 to 85 °C
TBIAS Temperature Under Bias 50 to 125 °C
TSTG Storage Temperature 65 to 150 °C
VID Input or Output Voltage 0.5 to VCC +0.5 V
VCCF Flash Chip Supply Voltage 0.6 to 5 V
VCCS SRAM Chip Supply Voltage 0.3 to 4.6 V
V(EF, RP) EFRP Voltage 0.6 to 13.5 V
PD Power Dissipation 0.7 W
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Depends on range.

M36W108T datasheet

M36W108T
PDF/DataSheet Download

  • Datasheet: M36W108T
  • File Size: 185886 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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