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Part Number: M36W416TG

 

 

 

 

Description: The M36W416TG is a low voltage Multiple Memory Product which combines two memory devices;a 16 Mbit boot block Flash mem...


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M36W416TG General Description


The M36W416TG is a low voltage Multiple Memory Product which combines two memory devices;a 16 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash memory and the SRAM memory to be active at the same time. The memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').

M36W416TG Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

TA

Ambient Operating Temperature -40 85
TBIAS Temperature Under Bias -40 125
TSTG Storage Temperature -55 150
VIO Input or Output Voltage -0.5 VDDQF +0.3 V
VDDF,VDDQF Flash Supply Voltage -0.5 3.8 V
VPPF Program Voltage -0.6 13
V
VDDS SRAM Supply Voltage -0.5 3.8 V

M36W416TG Features

 MULTIPLE MEMORY PRODUCT
16 Mbit (1Mb x 16) Boot Block Flash Memory
4 Mbit (256Kb x 16) SRAM SUPPLY VOLTAGE
VDDF = VDDS = 2.7V to 3.3V
VDDQF = VDDS = 2.7V to 3.3V
VPPF = 12V for Fast Program (optional)  ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M36W416TG: 88CEh
Bottom Device Code, M36W416BG: 88CFh

M36W416TG datasheet

M36W416TG
PDF/DataSheet Download

  • Datasheet: M36W416TG
  • File Size: 317729 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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    The M36W416TG is a low voltage Multiple Memory Product which combines two memory devices;a 16 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions of M36W416TGdo not allow both the Flash memory and the SRAM memory to be active at ...

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