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Part Number: M381L6423ETM-C(L)CC

 

 

 

 

 

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M381L6423ETM-C(L)CC Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

M381L6423ETM-C(L)CC Features

• Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (256MB) and double(512MB) sided
• SSTL_2 Interface

M381L6423ETM-C(L)CC datasheet

M38000E1-XXXFP
PDF/DataSheet Download

  • Datasheet: M38000E1-XXXFP
  • File Size: 2447095 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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