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Part Number: M390S6450CT1
Description: The Samsung M390S6450CT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Sam...
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M390S6450CT1
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General Description
M390S6450CT1 General Description
The Samsung M390S6450CT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450CT1 consists of eighteen CMOS 64Mx4 bit Synchronous DRAMs in TSOP-II 400mil packages, three 18-bits Drive ICs for input control signal, one PLL in 24-pin TSSOP package for clock and one 2K EEPROM in 8-pin TSSOP package for Serial Presence Detect on a 168-pin glass-epoxy substrate. Two 0.22uF and one 0.0022uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M390S6450CT1 is a Dual In-line Memory Module and is intented for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
M390S6450CT1 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
1.0 ~ 4.6 |
V |
| Voltage on VDD supply relative to Vss |
VDD,VDDQ |
1.0 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
|
| Power dissipation |
PD |
18 |
W |
| Short circuit current |
IOS |
50 |
mA |
Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
M390S6450CT1 Features
• Performance range
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,700mil), double sided component
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,700mil), double sided component
M390S6450CT1
PDF/DataSheet Download
- Datasheet: M390S6450CT1
- File Size: 225999 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·M39006
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
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- 214658 KB
- ·M39006/21
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
- 214658 KB
- ·M39006/22
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
- 214658 KB
- ·M39006/25
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
- 214658 KB
- ·M39006/30
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
- 214658 KB
- ·M39006/31
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
- 214658 KB
- ·M39006220660
- VISAY [Vishay Siliconix]
- Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
- 214658 KB
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