Purchase M39P0R9070E0, In-stock M39P0R9070E0 From SeekIC, PDF Datasheet Download.

Part Number:
M39P0R9070E0
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Description：
The M39P0R9070E0 combines two memory devices in one Multi-Chip Package: ① 512-M

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General Description

The M39P0R9070E0 combines two memory devices in one Multi-Chip Package: ① 512-Mbit Multiple Bank Flash memory (the M58PR512J) ② 128-Mbit Low Power Synchronous DRAM (the M65KA128AL)

This datasheet should be read in conjunction with the M58PR512J and M65KA128AL datasheets, available from www.st.com.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory is offered in a Stacked TFBGA105 package. It is supplied with all the bits erased (set to ‘1’).

Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	Min	Max	Unit
T_A	Ambient Operating Temperature	–25	85	°C
T_J	SDRAM Junction Temperature	–25	90	°C
T_BIAS	Temperature Under Bias	–25	85	°C
T_STG	Storage Temperature	–55	125	°C
V_IO	Input or Output Voltage	–0.5	2.6	V
V_DDF	Supply Voltage	–1.0	3.0	V
V_DDS	LPSDRAM Supply Voltage	–0.5	2.6	V
V_DDQ	Input/Output Supply Voltage	–0.5	2.6	V
V_PPF	Program Voltage	–1.0	12.6	V
I_O	Output Short Circuit Current		100	mA
t_VPPH	Time for V_PP at V_PPH		100	hours

Features

■ Multi-chip package
    – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
    – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low Power Synchronous Dynamic RAM
■ Supply voltage
    – V_DDF = V_CCP = V_DDQ = 1.7 to 1.95V
    – V_PPF = 9V for fast program (12V tolerant)
■ Electronic signature
    – Manufacturer Code: 20h
    – Device Code: 8819
■ Package
    – ECOPACK® (RoHS compliant)