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Part Number: M39P0R9070E0

 

 

 

 

Description: The M39P0R9070E0 combines two memory devices in one Multi-Chip Package: 512-Mbit Multiple Bank F...


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M39P0R9070E0 General Description


The M39P0R9070E0 combines two memory devices in one Multi-Chip Package:  512-Mbit Multiple Bank Flash memory (the M58PR512J) 128-Mbit Low Power Synchronous DRAM (the M65KA128AL)

This datasheet should be read in conjunction with the M58PR512J and M65KA128AL datasheets, available from www.st.com.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory is offered in a Stacked TFBGA105 package. It is supplied with all the bits erased (set to '1').

M39P0R9070E0 Maximum Ratings

Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature
25
85
°C
TJ
SDRAM Junction Temperature
25
90
°C
TBIAS
Temperature Under Bias
25
85
°C
TSTG
Storage Temperature
55
125
°C
VIO
Input or Output Voltage
0.5
2.6
V
VDDF
Supply Voltage
1.0
3.0
V
VDDS
LPSDRAM Supply Voltage
0.5
2.6
V
VDDQ
Input/Output Supply Voltage
0.5
2.6
V
VPPF
Program Voltage
1.0
12.6
V
IO
Output Short Circuit Current
 
100
mA
tVPPH
Time for VPP at VPPH
 
100
hours

M39P0R9070E0 Features

Multi-chip package
    1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
    1 die of 128 Mbit (4 Banks of 2Mb x16) Low Power Synchronous Dynamic RAM
Supply voltage
    VDDF = VCCP = VDDQ = 1.7 to 1.95V
    VPPF = 9V for fast program (12V tolerant)
Electronic signature
    Manufacturer Code: 20h
    Device Code: 8819
Package
    ECOPACK® (RoHS compliant)

M39P0R9070E0 Connection Diagram

M39P0R9070E0  Connection Diagram

M39P0R9070E0 datasheet

M39P0R9070E0
PDF/DataSheet Download

  • Datasheet: M39P0R9070E0
  • File Size: 247330 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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