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Part Number: M485L1624FU0-C(L)B3

 

 

 

 

 

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M485L1624FU0-C(L)B3 Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.66
V
Voltage on VDD supply relative to VSS
VDD
-1.0 ~ 3.6
V
Voltage on VDDQ supply relative to Vss
VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

M485L1624FU0-C(L)B3 Features

• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1250 (mil), single(128MB), double(256MB) sided component
• SSTL_2 Interface Pb-Free
• RoHS compliant

M485L1624FU0-C(L)B3 datasheet

M485L1624FT0
PDF/DataSheet Download

  • Datasheet: M485L1624FT0
  • File Size: 270388 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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