Purchase M4N37, In-stock M4N37 From SeekIC.
Part Number: M4N37
Description: The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photo...
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M4N37
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DataSheet
General Description
M4N37 General Description
The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
M4N37 Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| Reverse Voltage |
VR |
3 |
Volts |
| Forward Current - Continuous |
IF |
60 |
mA |
| LED Power Dissipation @ TA = 25 with Negligible Power in Output Detector Derate above 25°C |
PD |
100 1.14 |
mW mW/ |
| CollectorEmitter Voltage |
VCEO |
30 |
Volts |
| EmitterCollector Voltage |
VECO |
7 |
Volts |
| CollectorBase Voltage |
VCBO |
70 |
Volts |
| Collector Current - Continuous |
IC |
50 |
mA |
| Detector Power Dissipation @ TA = 25 with Negligible Power in Input LED Derate above 25 |
PD |
150 1.76 |
mW mW/ |
| Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) |
VISO |
7500 |
Vac(pk) |
| Total Device Power Dissipation @ TA = 25 Derate above 25 |
PD |
250 2.94 |
mW mW/ |
| Ambient Operating Temperature Range(2) |
TA |
55 to +100 |
|
| Storage Temperature Range(2) |
Tstg |
55 to +150 |
|
| Soldering Temperature (10 sec, 1/16, from case) |
TL |
260 |
|
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
M4N37 Features
• Current Transfer Ratio - 100% Minimum @ Specified Conditions
• Guaranteed Switching Speeds
• Meets or Exceeds All JEDEC Registered Specifications
• Guaranteed Switching Speeds
• Meets or Exceeds All JEDEC Registered Specifications
M4N37 Typical Application
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays
M4N37
PDF/DataSheet Download
- Datasheet: M4N37
- File Size: 143481 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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- ETC [ETC]
- MEDIUM CURRENT SILICON RECTIFIERS
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- MOTOROLA [Motorola, Inc]
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- ·M4N26
- MOTOROLA [Motorola, Inc]
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- 142933 KB
- ·M4N5
- ETC [ETC]
- MEDIUM CURRENT SILICON RECTIFIERS
- 183622 KB
- ·M4N9
- ETC [ETC]
- MEDIUM CURRENT SILICON RECTIFIERS
- 183622 KB
M4N37 Relative Products
M4N26
The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
M4N25
The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector.
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