M50530-001FP

The M50530-001FP is designed as one kind of microwave power GaAs FET device that has some points of features:(1)low intermodulation distortion: IM3=-45 dBc at Pout= 31.5dBm and single carrier level;(2)high power: P1dB=42.5dBm at 5.0GHz to 5.3GHz;(3)high gain: G1dB=8.5dB at 5.0GHz to 5.3GHz;(4)broad band internally matched FET;(5)hermetically sealed package.

The electrical characteristics of the M50530-001FP can be summarized as:(1)transconductance: 3600 ms;(2)pinch-off voltage: -1.0 to -4.0 V;(3)saturated drain current: 10.5 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance:1.5 to 2.0 °C/W.

The absolute maximum ratings of this device can be summarized as:(1)Drain-Source Voltage: 15 V;(2)Gate-Source Voltage: -15 V;(3)Drain Current: 14.0 A;(4)Total Power Dissipation (Tc= 25 °C): 75 W;(5)Channel Temperature: 175 ;(6)Storage Temperature: -65 to +175 . If you want to know more information such as the electrical characteristics about the M50530-001FP, please download the datasheet in www.seekic.com or www.chinaicmart.com.