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Part Number: M57959L

 

 

 

 

Description: M57959L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifi...


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M57959L General Description


M57959L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler.

Short circuit protection is provided by a built in desaturation detector.A fault signal is provided if the short circuit protection is activated.

M57959L Maximum Ratings

Symbol
ltem
Test Conditions
Limit
Units
VCC Supply Voltage*
DC
18
Volts
VEE
DC
-12
Volts
VI Input Voltage
-
-1to7
Volts
VO Output Voltage
Output Voltage "H"
VCC
Volts
IOHP Output Current
Pulse Width 2s, f = 30kHz
-2
Amperes
IOLP
Pulse Width 2s, f = 30kHz
2
Amperes
IOH Output Current
f = 30kHz, DF = 50%
0.2
Amperes
VRMS Isolation Voltage
Sinewave Voltage 60Hz, 1 min.
2500
Volts
Tj Junction Temperature
-
85
Topr Operating Temperature
(Differs from H/C Condition)
-20to70
Tstg Storage Temperature
-
*-25to100
IFO Fault Output Current
-
20
mA
VR1 Input Voltage
-
50
Volts
*20 Volts  VCC + VEE 28 Volts

M57959L Features

`Built in high CMRR optocoupler(VCMR : Typical 30kV/ s, Min. 15kV/ s)
`Electrical Isolation between input and output with opto-couplers(Viso = 2500,VRMS for 1 min.)
`TTL compatible input interface
`Two supply drive topology
`Built in short circuit protection circuit with a pin for fault output

M57959L Typical Application

To drive IGBT modules for inverter,AC Servo systems, UPS, CVCF inverter,and welding applications.

M57959L datasheet

M57959L
PDF/DataSheet Download

  • Datasheet: M57959L
  • File Size: 25129 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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