M58LW032C110N6F

The M58LW032C110N6F is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed.These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

Features of the M58LW032C110N6F are:(1)wide x16 data bus for high bandwidth;(2)supply voltage;(3)synchronous/asynchronous read;(4)access time;(5)programming time;(6)32 uniform 64 k word memory blocks;(7)enhanced security;(8)program and erase suspend;(9)100,000 program/erase cycles per block;(10)electronic signature.

The absolute maximum ratings of the M58LW032C110N6F can be summarized as:(1):the symbol is TBIAS,the parameter is temperature under bias,the Min is -40,the Max is 125,the unit is ;(2):the symbol is TSTG,the parameter is storage temperature,the Min is -55,the Max is 150,the unit is ;(3):the symbol is VIO,the parameter is input or output voltage,the Min is -0.6,the Max is VDDQ+0.6,the unit is V;(4):the symbol is VDD,VDDQ,the parameter is supply voltage,the Min is -0.6,the Max is 5.0,the unit is V.