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Part Number: M58LW064BNF

 

 

 

 

Description: The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and pro...


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M58LW064BNF General Description


The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organised as 4M by 16 bit. The M58LW064B has 4M by 16 bit or 2M by 32 bit organisation selectable by the Word Organisation WORD input. Both devices are internally configured as 64 blocks of 1 Mbit each.Burst Clock K signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and can be easily adapted to a large variety of system clock frequencies and microprocessors.

A 16 Word or 8 Double- Word Write Buffer improves effective programming speed by up to 20 times when data is programmed in full buffer increments. Effective Word programming takes typically 12ms. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Program and Erase operations can be suspended in order to perform either Read or Program in any other block and then resumed. All blocks are protected against spurious programming and erase cycles at power-up. Any block can be separately protected at any time. The block protection bits can also be deleted, this is executed as one sequence for all blocks simultaneously. Block protection can be temporarily disabled. Each block can be programmed and erased over 100,000 cycles. Block erase is performed in typically 1 second. An internal Command Interface (C.I.) decodes Instructions to access/modify the memory content.

The Program/Erase Controller (P/E.C.) automatically executes the algorithms taking care of the timings required by the program and erase operations. Verification is internally performed and a Status Register tracks the status of the operations. The Ready/Busy output RB indicates the completion of operations. Instructions are written to the memory through the Command Interface (C.I.) using standard microprocessor write timings.

The device supports the Common Flash Interface (CFI) command set definition. A Reset/Power-down mode is entered when the RP input is Low. In this mode the power consumption is lower than in the normal standby mode, the device is write protected and both the Status and the Burst Configuration Registers are cleared.

A recovery time is required when the RP input goes High. The device is offered in various package versions, TSOP56 (14 x 20 mm), TSOP86 Type II (11.76 x 22.22 mm) and LBGA54 1mm ball pitch for the M58LW064A and PQFP80 for the M58LW064B.

M58LW064BNF Maximum Ratings

Description
Symbol
Max
unit
Temperature Under Bias
TA
40 to 125
°C
Storage Temperature
TBIAS
55 to 150
°C
Input or Output Voltage
TSTG
0.6 to VDDQ +0.6
V
Supply Voltage
VIO
0.6 to 5.0
V
Ambient Operating Temperature
Grade 1
VDD, VDDQ
0 to 70
°C
Grade 6
40 to 85
RP Hardware Block Unlock Voltage
VHH
0.6 to 10 (2)
V

Note:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not  mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality
documents.
2. Cumulative time at a high voltage level of 10V should not exceed 80 hours on RP pin.

M58LW064BNF Features

M58LW064A x16 organisation,
M58LW064B x16/x32 selectable
MULTI-BIT CELL for HIGH DENSITY and LOW COST
SUPPLY VOLTAGE
VDD = 2.7V to 3.6V Supply Voltage
VDDQ = 2.7V to 3.6V or 1.8V to 2.5V Input/Output Supply Voltage
PIPELINED SYNCHRONOUS BURST
INTERFACE
SYNCHRONOUS/ASYNCHRONOUS READ
Synchronous Burst read
Asynchronous Random and Latch Enabled Controlled Read, with Page Read
ACCESS TIME
Synchronous Burst Read up to 66MHz
Asynchronous Page Mode Read 150/25ns,
PROGRAMMING TIME
16 Word or 8 Double-Word Write Buffer
12us Word effective programming time
MEMORY BLOCKS
64 Equal blocks of 1 Mbit
 ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code M58LW064A: 17h
Device Code M58LW064B: 14h

M58LW064BNF datasheet

M58LW064BNF
PDF/DataSheet Download

  • Datasheet: M58LW064BNF
  • File Size: 326822 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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