M58LW064D110N1F

The M58LW064D110N1F is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.The memory is divided into 64 blocks of 1Mbit that can be erased independently so it is possible to preserve valid data while old data is erased.The M58LW064D110N1F has several security features to increase data protection.

Features of the M58LW064D110N1F are:(1)wide x8 or x16 data bus for high bandwidth;(2)supply voltage;(3)access time;(4)programming time;(5)64 uniform 64 k word/128 k byte memory blocks;(6)enhanced security;(7)program and erase suspend;(8)package;(9)100,000 program/erase cycles per block;(10)common flash interface;(11)electronic signature.

The absolute maximum ratings of the M58LW064D110N1F can be summarized as:(1):the symbol is TBIAS,the parameter is temperature under bias,the Min is -40,the Max is 125,the unit is ;(2):the symbol is TSTG,the parameter is storage temperature,the Min is -55,the Max is 150,the unit is ;(3):the symbol is VIO,the parameter is input or output voltage,the Min is -0.6,the Max is VDDQ+0.6,the unit is V;(4):the symbol is VDD,VDDQ,the parameter is supply voltage,the Min is -0.6,the Max is 5.0,the unit is V;(5):the symbol is IOSC,the parameter is output short-circuit current,the Max is 100,the unit is mA.