M59MR032D

The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.The device supports synchronous burst read
and asynchronous page mode read from all the blocks of the memory array; at power-up the device is configured for page mode read. In synchronous burst mode, a new data is output at each clock cycle for frequencies up to 54MHz.

The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power-up. Blocks can be unprotected to make changes in the application and then reprotected.

Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Resume,Block Protect, Block Unprotect, Block Locking,CFI Query, are written to the memory through
a Command Interface (C.I.) using standard microprocessor write timings.

The memory is offered in LFBGA54 and BGA46,0.5 mm ball pitch packages and it is supplied with all the bits erased (set to '1').