M74HC21RM13TR

The M74HC21RM13TR is an high speed CMOS DUAL 4-INPUT AND GATE fabricated with silicon gate C2MOS technology.The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.All inputs are equipped with protection circuits against static discharge and transient excess voltage.

Features of the M74HC21RM13TR are:(1)high speed:tpd = 11ns (typ.) at vcc = 6v;(2) low power dissipation:icc = 1ma(max.) at ta=25;(3)high noise immunity:vnih = vnil = 28 % vcc (min.);(4)symmetrical output impedance:|ioh|=iol=4ma(min);(5)balanced propagation delays:tplh @ tphl;(6)wide operating voltage range:vcc (opr) = 2v to 6v;(7)pin and function compatible with 74 series 21.

The absolute maximum ratings of the M74HC21RM13TR can be summarized as:(1):the symbol is VCC,the parameter supply voltage,the value -0.5 to +7,the unit is V;(2):the symbol is VI,the parameter DC input voltage,the value -0.5 to VCC + 0.5,the unit is V;(3):the symbol is VO,the parameter DC output voltage,the value -0.5 to VCC + 0.5,the unit is V;(4):the symbol is IIK,the parameter DC input diode current,the value ±20,the unit is mA;(5):the symbol is IOK,the parameter DC output diode current,the value ±20,the unit is mA;(6):the symbol is IO,the parameter DC output current,the value ±25,the unit is mA;(7):the symbol is ICC or IGND,the parameter DC VCC or ground current,the value ±50,the unit is mA;(8):the symbol is PD,the parameter power dissipation,the value 500,the unit is mW;(9):the symbol is Tstg,the parameter storage temperature,the value -65 to +150,the unit is ;(10):the symbol is TL,the parameter lead temperature(10 sec),the value 300,the unit is .