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Part Number: M74HC4075RM13TR

 

 

 

 

Description: The M74HC4075RM13TR is an high speed CMOS TRIPLE 3-INPUT OR GATE fabricated with silicon gate C2MOS technology.All inpu...


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M74HC4075RM13TR General Description


The M74HC4075RM13TR is an high speed CMOS TRIPLE 3-INPUT OR GATE fabricated with silicon gate C2MOS technology.All inputs are equipped with protection circuits against static discharge and transient excess voltage.
 
Features of the M74HC4075RM13TR are:(1)high speed:tPD = 9 ns (TYP.) AT VCC =6 V;(2) low power dissipation:icc = 1a(max.) at ta=25;(3)high noise immunity:VNIH=VNIL=28%VCC(min.);(4)symmetrical output impedance:|IOH|=IOL=4mA (MIN);(5)balanced propagation delays:tPLH =-tPHL;(6)wide operating voltage range:VCC(OPR)=2V to 6V;(7)pin and function compatible with 4075.
 
The absolute maximum ratings of the M74HC4075RM13TR can be summarized as:(1):the symbol is VCC,the parameter is supply voltage,the value -0.5 to +7,the unit is V;(2):the symbol is VI,the parameter is DC input voltage,the value -0.5 to VCC + 0.5,the unit is V;(3):the symbol is VO,the parameter is DC output voltage,the value -0.5 to VCC + 0.5,the unit is V;(4):the symbol is IIK,the parameter is DC input diode current,the value ±20,the unit is mA;(5):the symbol is IOK,the parameter is DC output diode current,the value ±20,the unit is mA;(6):the symbol is IO,the parameter is DC output current,the value ±25,the unit is mA;(7):the symbol is ICC or IGND,the parameter is DC VCC or ground current,the value ±50,the unit is mA;(8):the symbol is PD,the parameter is power dissipation,the value 500,the unit is mW;(9):the symbol is Tstg,the parameter is storage temperature,the value -65 to +150,the unit is ;(10):the symbol is TL,the parameter is lead temperature(10 sec),the value 300,the unit is .

M74HC4075RM13TR datasheet

M74HC4075RM13TR
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  • Datasheet: M74HC4075RM13TR
  • File Size: 195161 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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