M74HC595B1R

The M74HC595B1R is a high speed CMOS 8-BIT SHIFT REGISTERS/OUTPUT LATCHES (3-STATE) fabricated in silicon C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption.This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register.

Features of the M74HC595B1R are:(1)high speed fMAX = 55 MHz (TYP.) AT VCC = 5 V;(2)low power dissipation ICC=4 A (MAX.) AT TA = 25;(3)high noise immunity VNIH = VNIL = 28 % VCC (MIN.);(4)output drive capability;(5)symmetrical output impedance;(6)balanced propagation delays tPLH = tPHL;(7)wide operating voltage range VCC (OPR) = 2V to 6V;(8)pin and function compatible with lsttl.

The absolute maximum ratings of the M74HC595B1R can be summarized as:(1):the symbol is VCC,the parameter is supply voltage,the value is -0.5 to 7,the unit is V;(2):the symbol is VI,the parameter is DC input voltage,the value is -0.5 to VCC+0.5,the unit is V;(3):the symbol is VO,the parameter is DC output voltage,the value is -0.5 to VCC+0.5,the unit is V;(4):the symbol is IIK,the parameter is DC input diode current,the value is ±20,the unit is mA;(5):the symbol is IOK,the parameter is DC output diode current,the value is ±20,the unit is mA;(6):the symbol is IO,the parameter is DC output current per output pin QA-QH,the value is ±35,the unit is mA;(7):the symbol is IO,the parameter is DC output current per output pin QH',the value is ±25,the unit is mA;(8):the symbol is ICC or IGND,the parameter is DC VCC or ground current,the value is ±70,the unit is mA;(9):the symbol is PD,the parameter is power dissipation,the value is 500,the unit is mW;(10):the symbol is Tstg,the parameter is storage temperature,the value is -65 to +150,the unit is ;(11):the symbol is TL,the parameter is lead temperature (10 sec),the value is 300,the unit is .