M74HCT00RM13TR

The M74HCT00RM13TR is an high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.All inputs are equipped with protection circuits against static discharge and transient excess voltage.
 
Features of the M74HCT00RM13TR are:(1)high speed:tPD = 12ns (TYP.) at VCC = 4.5V;(2) low power dissipation:icc =1a(max.) at ta=25;(3)symmetrical output impedance:|IOH|=IOL=4mA (MIN);(4)balanced propagation delays:tPLH =-tPHL;(5)compatible with ttl outputs:VIH = 2V (MIN.) VIL = 0.8V (MAX);(6)pin and function compatible with 74 series 74.
 
The absolute maximum ratings of the M74HCT00RM13TR can be summarized as:(1):the symbol is VCC,the parameter is supply voltage,the value -0.5 to +7,the unit is V;(2):the symbol is VI,the parameter is DC input voltage,the value -0.5 to VCC + 0.5,the unit is V;(3):the symbol is VO,the parameter is DC output voltage,the value -0.5 to VCC + 0.5,the unit is V;(4):the symbol is IIK,the parameter is DC input diode current,the value ±20,the unit is mA;(5):the symbol is IOK,the parameter is DC output diode current,the value ±20,the unit is mA;(6):the symbol is IO,the parameter is DC output current,the value ±25,the unit is mA;(7):the symbol is ICC or IGND,the parameter is DC VCC or ground current,the value ±50,the unit is mA;(8):the symbol is PD,the parameter is power dissipation,the value 500,the unit is mW;(9):the symbol is Tstg,the parameter is storage temperature,the value -65 to +150,the unit is ;(10):the symbol is TL,the parameter is lead temperature(10 sec),the value 300,the unit is .