M74HCT30RM13TR

The M74HCT30RM13TR is an high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology.The M74HCT30RM13TR  is designed to directly interface HSC2MOS systems with TTL and NMOS components.All inputs are equipped with protection circuits against static discharge and transient excess voltage.

Features of the M74HCT30RM13TR are:(1)high speed:tpd = 18ns (typ.) at vcc = 4.5v;(2) low power dissipation:icc = 1a(max.) at ta=25;(3)symmetrical output impedance:|ioh|=iol=4ma(min);(4)balanced propagation delays:tplh = tphl;(5)compatible with ttl outputs :vih = 2v (min.) vil = 0.8v (max);(6)pin and function compatible with 74 series 30.

The absolute maximum ratings of the M74HCT30RM13TR can be summarized as:(1):the symbol is VCC,the parameter supply voltage,the value -0.5 to +7,the unit is V;(2):the symbol is VI,the parameter DC input voltage,the value -0.5 to VCC + 0.5,the unit is V;(3):the symbol is VO,the parameter DC output voltage,the value -0.5 to VCC + 0.5,the unit is V;(4):the symbol is IIK,the parameter DC input diode current,the value ±20,the unit is mA;(5):the symbol is IOK,the parameter DC output diode current,the value ±20,the unit is mA;(6):the symbol is IO,the parameter DC output current,the value ±25,the unit is mA;(7):the symbol is ICC or IGND,the parameter DC VCC or ground current,the value ±50,the unit is mA;(8):the symbol is PD,the parameter power dissipation,the value 500,the unit is mW;(9):the symbol is Tstg,the parameter storage temperature,the value -65 to +150,the unit is ;(10):the symbol is TL,the parameter lead temperature(10 sec),the value 300,the unit is .