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Part Number: M74HCT86

 

 

 

 

Description: The M74HCT86 is an high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate C2MO...


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M74HCT86 General Description


The M74HCT86 is an high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology.

Input and output buffer are installed, which enables high noise immunity and stable output.

The M74HCT86 is designed to directly interface HSC2MOS systems with TTL and NMOS components.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

M74HCT86 Maximum Ratings

Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7 V
VI DC Input Voltage -0.5 to VCC + 0.5 V
VO DC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current ± 20 mA
IOK DC Output Diode Current ± 20 mA
IO DC Output Current ± 25 mA
ICC or IGND DC VCC or Ground Current ± 50 mA
PD Power Dissipation 500(*) mW
Tstg Storage Temperature -65 to +150 °C
TL Lead Temperature (10 sec) 300 °C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

M74HCT86 Features

`HIGH SPEED:
  tPD = 15ns (TYP.) at VCC = 4.5V
`LOW POWER DISSIPATION:
  ICC = 1mA(MAX.) at TA=25°C
`COMPATIBLE WITH TTL OUTPUTS :
  VIH = 2V (MIN.) VIL = 0.8V (MAX)
`SYMMETRICAL OUTPUT IMPEDANCE:
  |IOH| = IOL = 4mA (MIN)
`BALANCED PROPAGATION DELAYS:
  tPLH tPHL
`PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 86

M74HCT86 Connection Diagram

M74HCT86  Connection Diagram

M74HCT86 datasheet

M74HCT86
PDF/DataSheet Download

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