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M76DW62000A

Features: `MULTIPLE MEMORY PRODUCT 64 Mbit (8Mb x8 or 4Mb x16), Multiple Bank, Page, Boot Block, Flash Memory SRAM: 8Mbit (512K x 16) for M76DW63000A, or 4Mbit (256K x 16) for M76DW62000A`SUPPLY VOLTAGE VCCF = VCCS = 2.7V to 3.3V VPPF = 12V for Fast Program (optional)`ACCESS TIME: 70, 90ns`LO...

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SeekIC No. : 004407289 Detail

M76DW62000A: Features: `MULTIPLE MEMORY PRODUCT 64 Mbit (8Mb x8 or 4Mb x16), Multiple Bank, Page, Boot Block, Flash Memory SRAM: 8Mbit (512K x 16) for M76DW63000A, or 4Mbit (256K x 16) for M76DW62000A`SUPPLY ...

M76DW62000A Data Sheet

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Part Number:
M76DW62000A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`MULTIPLE MEMORY PRODUCT
  64 Mbit (8Mb x8 or 4Mb x16), Multiple Bank, Page, Boot Block, Flash Memory
  SRAM: 8Mbit (512K x 16) for   M76DW63000A, or 4Mbit (256K x 16) for M76DW62000A
`SUPPLY VOLTAGE
  VCCF = VCCS = 2.7V to 3.3V
  VPPF = 12V for Fast Program (optional)
`ACCESS TIME: 70, 90ns
`LOW POWER CONSUMPTION
`ELECTRONIC SIGNATURE
  Manufacturer Code: 0020h
  Device Code: 227Eh + 2202h + 2201h


Specifications

Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Symbol Parameter Value Unit
Min Max
TA Ambient Operating Temperature (1) 40 85 °C
TBIAS Temperature Under Bias 50 125 °C
TSTG Storage Temperature 65 150 °C
VIO Input or Output Voltage 0.5 VCCF +0.3 V
VCCF Flash Supply Voltage 0.6 4 V
VID Identification Voltage 0.6 13.5 V
VPPF Program Voltage 0.6 13.5 V
VCCS SRAM Supply Voltage 0.5 8 V



Description

The M76DW62000A is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank, Boot Block Flash memory (M29DW640D) and an 8 or 4Mbit SRAM. This document should be read in conjunction with the M29DW640D datasheet.

Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

The memory is offered in an LFBGA73 (8 x 11.6mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').




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