Position: Home > Datasheet list > M93 Series > Index M > M93S46
Electronica China

Purchase M93S46, In-stock M93S46 From SeekIC.

MFG:ST  D/C:07/08+  

M93S46 Product Image

M93 Series Datasheet download

Five Points

Part Number: M93S46

 

MFG: ST

 

D/C: 07/08+

Description: This specification covers a range of 4K, 2K, 1K bitserial Electrically Erasable Programmable Memo-ry (...


Urgent Purchase

M93S46 General Description


This specification covers a range of 4K, 2K, 1K bitserial Electrically Erasable Programmable Memo-ry (EEPROM)products (respectively for M93S66,M93S56, M93S46). In this text, these products arecollectively referred to as M93Sx6.

The M93Sx6 is accessed through a serial input (D)and output (Q) using the MICROWIRE bus proto-col. The memory is divided into 256, 128, 64 x16bit words (respectively for M93S66, M93S56,M93S46).

The M93Sx6 is accessed by a set of instructionswhich includes Read, Write, Page Write, Write Alland instructions used to set the memory protec-tion. These are summarized in Table 2. and Table3.).

A Read Data from Memory (READ) instructionloads the address of the first word to be read intoan internal address pointer. The data contained atthis address is then clocked out serially. The ad-dress pointer is automatically incremented afterthe data is output and, if the Chip Select Input (S)is held High, the M93Sx6 can output a sequentialstream of data words. In this way, the memory canbe read as a data stream from 16 to 4096 bits (forthe M93S66), or continuously as the addresscounter automatically rolls over to 00h when thehighest address is reached.

Within the time required by a programming cycle(tW), up to 4 words may be written with help of thePage Write instruction. the whole memory mayalso be erased, or set to a predetermined pattern,by using the Write Allinstruction. Within the memory, a user defined area may beprotected against further Write instructions. Thesize of this area is defined by the content of a Pro-tection Register, located outside of the memory ar-ray. As a final protection step, data may bepermanently protected by programming a OneTime Programming bit (OTP bit) which locks theProtection Register content.

Programming is internally self-timed (the externalclock signal on Serial Clock (C) may be stopped orleft running after the start of a Write cycle) anddoes not require an erase cycle prior to the Writeinstruction. The Write instruction writes 16 bits at atime into one of the word locations of the M93Sx6,the Page Write instruction writes up to 4 words of16 bits to sequential locations, assuming in bothcases that all addresses are outside the Write Pro-tected area. After the start of the programming cy-cle, a Busy/Ready signal is available on SerialData Output (Q) when Chip Select Input (S) is driv-en High.

M93S46 Maximum Ratings

Symbol
Parameter
Min.
Max.
Unit
TSTG
Storage Temperature
65
150
TLEAD
Lead Temperature during Soldering
See note1
VOUT
Output range (Q = VOH or Hi-Z)
0.50
VCC+0.5
V
VIN
Input range
0.50
VCC+1
V
VCC
Supply Voltage
0.50
6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model)2
4000
4000
V

M93S46 Features

Industry Standard MICROWIRE Bus
Single Supply Voltage:
    4.5 to 5.5V for M93Sx6
    2.5 to 5.5V for M93Sx6-W
    1.8 to 5.5V for M93Sx6-R
Single Organization: by Word (x16)
Programming Instructions that work on: Word or Entire Memory
Self-timed Programming Cycle with Auto-Erase
User Defined Write Protected Area
Page Write Mode (4 words)
Ready/Busy Signal During Programming
Speed:
    1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
    2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G)
Sequential Read Operation
Enhanced ESD/Latch-Up Behavior
More than 1 Million Erase/Write Cycles
More than 40 Year Data Retention

M93S46 Connection Diagram

M93S46  Connection Diagram

M93S46 datasheet

M93S46
PDF/DataSheet Download

  • Datasheet: M93S46
  • File Size: 538063 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

Find M93S46 Suppliers

  • ·M9306
  • STMICROELECTRONICS [STMicroelectronics] 
  • 256BIT (16X16) SERIAL NMOS EEPROM 
  • 157782 KB
  • M9306 Datasheet Download
  • ·M9306B
  • STMICROELECTRONICS [STMicroelectronics] 
  • 256BIT (16X16) SERIAL NMOS EEPROM 
  • 157782 KB
  • M9306B Datasheet Download
  • ·M9306-BN3T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 
  • 626058 KB
  • M9306-BN3T Datasheet Download
  • ·M9306-BN6T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 
  • 626058 KB
  • M9306-BN6T Datasheet Download
  • ·M9306-DS3T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 
  • 626058 KB
  • M9306-DS3T Datasheet Download
  • ·M9306-DS6T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 
  • 626058 KB
  • M9306-DS6T Datasheet Download
  • ·M9306-DW3T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 
  • 626058 KB
  • M9306-DW3T Datasheet Download
  • ·M9306-DW6T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 
  • 626058 KB
  • M9306-DW6T Datasheet Download

M93S46 Relative Products

  • M93C86-WMN6TP

    M93C86-WMN6TP

    IC EEPROM 16KBIT MICROWIRE SO-8

  • M93C86-WMN6P

    M93C86-WMN6P

    IC SRL EEPROM 16KBIT 5.5V 8 SOIC

  • M93C86-WDW6TP

    M93C86-WDW6TP

    IC EEPROM 16KBIT MICROWR 8-TSSOP

  • M93C86-MN6TP

    M93C86-MN6TP

    IC EEPROM 16KBIT MICROWIRE SO-8

  • M93C86-MN6T

    M93C86-MN6T

    IC SRL EEPROM 16KBIT 5.5V 8 SOIC

  • M93C86,

    M93C86,

    M93C86, these electrically erasable programmable memo- ry (EEPROM) devices are accessed through a Se- rial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol.

Hotspot Suppliers Product

  • Models: TLP250
Price: 0.9-1.2 USD

    TLP250

    Price: 0.9-1.2 USD

    transistor inverter, DIP8, 20 mA, integrated photodetector

  • Models: DS1643-100+
Price: 0.1-5 USD

    DS1643-100+

    Price: 0.1-5 USD

    8k × 8 nonvolatile static RAM, DIP-28, 100NS, 0.3V to +7.0V, Integrated NV SRAM

  • Models: MAX4478AUD
Price: 2.5-3 USD

    MAX4478AUD

    Price: 2.5-3 USD

    IC OP AMP R-R LN 10MHZ 14-TSSOP - MAX4478AUD

  • Models: DS1302Z
Price: 0.1-0.5 USD

    DS1302Z

    Price: 0.1-0.5 USD

    Timekeeping Chip, 31*8 RAM, 8 SO

  • Models: TE28F128J3C150
Price: 10-15 USD

    TE28F128J3C150

    Price: 10-15 USD

    125 ns Initial Access Speed, 56TSOP, 64-bit User Programmable OTP Cells, Intel StrataFlash Memory

  • Models: GS880Z18BT-200
Price: 8-9 USD

    GS880Z18BT-200

    Price: 8-9 USD

    TQFP, GS880Z18BT-200, 9Mb Pipelined, Flow Through Synchronous, NBT SRAM , GSI Technology

  • Models: MT47H16M16BG-37E:B
Price: 2.61-2.9 USD

    MT47H16M16BG-37E:B

    Price: 2.61-2.9 USD

    DDR2 SDRAM, 256MBIT, 84FBGA, 3.75ns, Lead Free, RoHS Compliant, Surface Mount, 533MHz

  • Models: MN15814KSG
Price: 1-10 USD

    MN15814KSG

    Price: 1-10 USD

    MN15814KSG, Motorola, Inc, DIP, Integrated Circuits

  • Models: 5Q0765RT
Price: 1-4 USD

    5Q0765RT

    Price: 1-4 USD

    5Q0765RT, TO-220F, off-line SMPS, Fairchild Power Switch(FPS), integrated fixed oscillator

  • Models: HY5DU281622FTP-5
Price: 2-3 USD

    HY5DU281622FTP-5

    Price: 2-3 USD

    Double Data Rate, TSOP, -0.5 ~ 3.6V

  • Models: RHRP15120
Price: 0.8-1.2 USD

    RHRP15120

    Price: 0.8-1.2 USD

    hyperfast diode, TO-220, 1200 V

  • Models: EP910DC-35
Price: 8.8-10.8 USD

    EP910DC-35

    Price: 8.8-10.8 USD

    EPLD, CDIP40, –175 to 175 mA, –2.0 to 7.0V, high-speed, low-power logic integration

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All