Purchase M93S66,, In-stock M93S66, From SeekIC.


Part Number: M93S66,
Description: This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memo-ry ...


Description: This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memo-ry ...
This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memo-ry (EEPROM) products (respectively for M93S66,M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6.
| Symbol | Parameter | Min. | Value | Unit |
| TSTG | Storage Temperature | 65 | 150 | |
| TLEAD | Lead Temperature during Soldering PDIP: 10 seconds SO: 20 seconds (max) 1 TSSOP: 20 seconds (max) 1 |
260 235 235 |
||
| VOUT | Output range (Q = VOH or Hi-Z) | 0.3 | VCC+0.5 | V |
| VIN | Input or Output range |
0.3 | VCC+1 | V |
| VCC | Supply Voltage |
-0.3 | 6.5 | V |
| VESD | Electrostatic Discharge Voltage (Human Body model) 2 | -4000 | 4000 | V |
`Industry Standard MICROWIRE Bus
`Single Supply Voltage:
4.5V to 5.5V for M93Sx6
2.5V to 5.5V for M93Sx6-W
1.8V to 5.5V for M93Sx6-R
`Single Organization: by Word (x16)
`Programming Instructions that work on: Word or Entire Memory
`Self-timed Programming Cycle with Auto-Erase
`User Defined Write Protected Area
`Page Write Mode (4 words)
`Ready/Busy Signal During Programming
`Speed:
1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W)
`Sequential Read Operation
`Enhanced ESD/Latch-Up Behavior
`More than 1 Million Erase/Write Cycles
`More than 40 Year Data Retention
M9306
PDF/DataSheet Download








