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Part Number: M95512-R

 

 

 

 

Description: These electrically erasable programmable memory (EEPROM) devices are accessed by a high speed SPI-comp...


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M95512-R General Description


These electrically erasable programmable memory (EEPROM) devices are accessed by a high speed SPI-compatible bus. The memory array is organized as 65536 x 8 bit.

The device is accessed by a simple serial interface that is SPI-compatible. The bus signals are C, D and Q, as shown in Table 2. and Figure 2.

The device is selected when Chip Select (S) is taken Low. Communications with the device can be interrupted using Hold (HOLD).

M95512-R Maximum Ratings

Symbol
Parameter
Min
Max
Unit
TA
Ambient Operating Temperature
40
125
°C
TSTG
Storage Temperature
65
150
°C
TLEAD
Lead Temperature during Soldering
See note (1)
°C
VO
Output Voltage
0.50
VCC+0.6
V
VI
Input Voltage
0.50
6.5
V
VCC
Supply Voltage
0.50
6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) 2
4000
4000
V

M95512-R Features

Compatible with SPI Bus Serial Interface (Positive Clock SPI Modes)
Single Supply Voltage:
     2.5 to 5.5V for M95512-W
     1.8 to 5.5V for M95512-R
High Speed
     10MHz Clock Rate
     5ms Write Time
Status Register
Hardware Protection of the Status Register
BYTE and PAGE WRITE (up to 128 Bytes)
Self-Timed Programming Cycle
Adjustable Size Read-Only EEPROM Area
Enhanced ESD Protection
More than 100,000 Erase/Write Cycles
More than 40-Year Data Retention

M95512-R Connection Diagram

M95512-R  Connection Diagram

M95512-R datasheet

M95512-R
PDF/DataSheet Download

  • Datasheet: M95512-R
  • File Size: 544648 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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