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MA1046-1

Features: Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHzVd1, 2 = +6.0V, Vd3 = +10.0VVg1, 2 = 5.0V, Vg3 = 3.0VApplicationPower amplifier for PHS base station/Japan.Specifications No. Items Symbol Condition Standard Unit 1 Case temperature TC 20 ~ +70 2 Storage temperature Ts...

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MA1046-1: Features: Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHzVd1, 2 = +6.0V, Vd3 = +10.0VVg1, 2 = 5.0V, Vg3 = 3.0VApplicationPower amplifier for PHS base station/Japan.Specifications No. Items Symb...

MA1046-1 Data Sheet

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Part Number:
MA1046-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz
Vd1, 2 = +6.0V, Vd3 = +10.0V
Vg1, 2 = 5.0V, Vg3 = 3.0V




Application

Power amplifier for PHS base station/Japan.


Specifications

No. Items Symbol Condition Standard Unit
1 Case temperature TC   20 ~ +70
2 Storage temperature Tstg   40 ~ +95
3 Voltage VD12, VD 3 VG 12 = 5.0 V, VG 3 = 3.0 V VD 12 = 6.0 V, VD 3 = 10.0 V V
4 Gate Voltage VD12, VD 3 VD 12 = 6.0 V, VD 3 = 10.0 V VG 12 = 8.0 V, VG = 8.0 V V
5 Input Power Vg   +10 dBm dBm



Description

The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50 




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