Purchase MA1046-1, In-stock MA1046-1 From SeekIC.
Part Number: MA1046-1
Description: The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, R...
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MA1046-1
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DataSheet
General Description
MA1046-1 General Description
The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50
MA1046-1 Maximum Ratings
| No. | Items | Symbol | Condition | Standard | Unit |
| 1 | Case temperature | TC | 20 ~ +70 | ||
| 2 | Storage temperature | Tstg | 40 ~ +95 | ||
| 3 | Voltage | VD12, VD 3 | VG 12 = 5.0 V, VG 3 = 3.0 V | VD 12 = 6.0 V, VD 3 = 10.0 V | V |
| 4 | Gate Voltage | VD12, VD 3 | VD 12 = 6.0 V, VD 3 = 10.0 V | VG 12 = 8.0 V, VG = 8.0 V | V |
| 5 | Input Power | Vg | +10 dBm | dBm |
MA1046-1 Features
Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz
Vd1, 2 = +6.0V, Vd3 = +10.0V
Vg1, 2 = 5.0V, Vg3 = 3.0V
MA1046-1 Typical Application
Power amplifier for PHS base station/Japan.
MA1046-1
PDF/DataSheet Download
- Datasheet: MA1046-1
- File Size: 27172 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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