Purchase MA1114-1, In-stock MA1114-1 From SeekIC.
Part Number: MA1114-1
Description: The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages...
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MA1114-1
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DataSheet
General Description
MA1114-1 General Description
The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power monitoring circuit.
MA1114-1 Maximum Ratings
| No. | Items | Symbol | Condition | Standard | Unit |
| 1 | Case temperature | TC | 40 ~ +70 | ||
| 2 | Storage temperature | Tstg | 40 ~ +80 | ||
| 3 | Collector Voltage | VC | +26.0 | V | |
| 4 | Drain Voltage | Vd | Vg = 6V | +11.5 | V |
| 5 | Gate Voltage | Vg | Vd = +10V | 10.0 | V |
| 6 | RF Input Power | Pin | 9.0 | dBm |
MA1114-1 Features
`Specified +25/+10 Volt Chracteristics
`RF Output Power : +45 dBm (typ.)
` Harmoics : 65 dBc typ.
`Small Size : 77 * 148 * 40 mm3
`50 Ohm Iput/Output Impedaces
MA1114-1 Typical Application
·PCS (1930 ~ 1990 MHz) Base station
MA1114-1
PDF/DataSheet Download
- Datasheet: MA1114-1
- File Size: 23966 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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MA1114-1 Relative Products
MA1113-1
The MA1113-1 is a 20W power amplifierdesigned for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power onitoring circuit.
MA1100-1
The MA1100-1 is a 30W power amplifier designed for DCS 1800, which comprises 4 stages GaAs FET and 2 stages Si bipolar ansistors, also RF power monitoring circuit.
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