Purchase MA4P7470F-1072T, In-stock MA4P7470F-1072T From SeekIC.
MFG:MA-COM
Part Number: MA4P7470F-1072T
MFG: MA-COM
Description: The MA4P7470F-1072T is a surface mountable PIN diode in a Non-Magnetic ( patent pending ) Metal Electr...
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MA4P7470F-1072T
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DataSheet
General Description
MA4P7470F-1072T General Description
The MA4P7470F-1072T is a surface mountable PIN diode in a Non-Magnetic ( patent pending ) Metal Electrode Leadless Faced (MELF) package. The device incorporates M/A-COM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes M/A-COM's new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7470F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance.
MA4P7470F-1072T Maximum Ratings
| Parameter | Absolute Maximum |
| Operating Temperature | -65 to +125 |
| Storage Temperature | -65 to +150 |
| Diode Junction Temperature | +175 Continuous |
| Diode Mounting Temperature | +235 for 10 seconds |
| RF C.W. Incident Power | + 53 dBm C.W. |
| Forward D.C. Current | + 150 mA |
| Reverse Voltage @ -10 uA | l 900 V l |
MA4P7470F-1072T Features
·Non-Magnetic Package Suitable for MRI Applications
·Rectangular MELF SMQ Ceramic Package
· Hermetically Sealed
· Lower Rs for Lower Series Loss
· Longer tL for Lower Intermodulation Distortion
· Lower Cj for Higher Series Isolation
·Higher Average Incident Power Handling Capability
·Rectangular MELF SMQ Ceramic Package
· Hermetically Sealed
· Lower Rs for Lower Series Loss
· Longer tL for Lower Intermodulation Distortion
· Lower Cj for Higher Series Isolation
·Higher Average Incident Power Handling Capability
MA4P7470F-1072T Typical Application
The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 200 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.
MA4P7470F-1072T
PDF/DataSheet Download
- Datasheet: MA4P7470F-1072T
- File Size: 140439 KB
- Manufacturer: MACOM [Tyco Electronics]
- Click here to Download
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