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Part Number: MA4ST550
Description: The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low par...


Description: The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low par...
The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1.
| Parameter | Absolute Maximum |
| Reverse Voltage Operating Temperature Storage Temperature Temperature Coefficient |
Same as Breakdown Voltage - 65°C to +150°C - 65°C to +200°C 400 ppm/°C at -4 Volts |
The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications.
MA4ST550
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