Features: ·High Q· Usable Capacitance Change of 7:1· Low Reverse Leakage for Good Post Tuning Drift Characteristics· Reproducible C-V CurvesApplicationThe MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is ...
MA4ST550: Features: ·High Q· Usable Capacitance Change of 7:1· Low Reverse Leakage for Good Post Tuning Drift Characteristics· Reproducible C-V CurvesApplicationThe MA4ST550 series is appropriate for use in V...
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DescriptionThe MA4ST401-287 is one member of the MA4ST400 series which designed as the surface mou...
The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications.
| Parameter | Absolute Maximum |
| Reverse Voltage Operating Temperature Storage Temperature Temperature Coefficient |
Same as Breakdown Voltage - 65°C to +150°C - 65°C to +200°C 400 ppm/°C at -4 Volts |
The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1.