MAALSS0012

Features: ·Low Noise Figure·High IP3·Single +3 V or +5 V Supply Voltage·Very Stable Over TemperatureSpecifications Parameter Absolute Maximum RF Input PowerVoltageOperating TemperatureStorage Temperature 15 dBm6.0 volts-40 °C to +85 °C-65 °C to +150 °C1. Exceeding any one or combin...

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MAALSS0012 Picture
SeekIC No. : 004408022 Detail

MAALSS0012: Features: ·Low Noise Figure·High IP3·Single +3 V or +5 V Supply Voltage·Very Stable Over TemperatureSpecifications Parameter Absolute Maximum RF Input PowerVoltageOperating TemperatureS...

floor Price/Ceiling Price

Part Number:
MAALSS0012
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

·Low Noise Figure
·High IP3
·Single +3 V or +5 V Supply Voltage
·Very Stable Over Temperature



Specifications

Parameter
Absolute Maximum
RF Input Power
Voltage
Operating Temperature
Storage Temperature

15 dBm
6.0 volts
-40 °C to +85 °C
-65 °C to +150 °C

1. Exceeding any one or combination of these limits may cause
permanent damage.
2. Minimum MTTF is 1x106 at +85°C, +5V, and 100 mA.



Description

M/A-COM's MAALSS0012 broadband gain stage is a GaAs MMIC amplifier in a low-cost miniature SOT-363 surface mount plastic package. The MAALSS0012 employs a monolithic 1-stage self-biased design featuring a convenient 50 ohm input/output impedance that minimizes the number of external components required. The device typically runs from a single 3.0 volt supply and may also operate at any voltage up to 5.0 volts for improved power performance. Its broadband design provides usable performance from 200 to 3000 MHz.

M/A-COM fabricates the MAALSS0012 using an E/D MESFET process to realize low noise and high dynamic range. The process features full passivation for performance and reliability.




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