MAIA-007495-000100

RF Input Power ¹² ..............................+17 dBm
LO Drive Power ¹² ..............................+23 dBm
VDD ....................................................+10 VDC
Current ¹³ ..............................................80 mA
Channel Temperature ¹⁴.................... +150°C
Operating Temperature ........-40°C to +85°C
Storage Temperature .........-65°C to +150°C
10.Exceeding any one or combination of these limits may cause permanent damage to this device.
11.M/A-COM does not recommend sustained operation near these survivability limits.
12.Total power for RF and LO ports should not exceed +23 dBm.
13.When pin #2 is used to increase current-see note 8 above.
14.Thermal resistance (jc) = +95°C/W.

M/A-COM's MAIA-007495-000100 is an integrated assembly containing a GaAs FET MMIC LNA and GaAs FET mixer. This device is packaged in a 16 leaded QSOP plastic surface mount package. The amplifier can be biased with either +3V or +5V, the mixer requires no DC bias. The conversion gain of the integrated combination is typically 6 dB at +3V
bias and 8 dB at +5V bias. The SA65-0003 is ideally suited for RF/IF communications applications requiring down conversion with some gain.

This MAIA-007495-000100 contains a mixer that is fabricated using a mature 1-micron GaAs process, MAIA-007495-000100 also contains an LNA that is fabricated using a low cost mature 0.5- micron gate length GaAs MESFET process. Both die feature full passivation for increased performance and reliability.