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MFG:ADI D/C:09
Part Number: MAT01
MFG: ADI
D/C: 09
Description: The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" proce...
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MAT01
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DataSheet
General Description
MAT01 General Description
The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 mV, temperature drift of 0.15 mV/°C, and hFE matching of 0.7%. Very high hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.
MAT01 Maximum Ratings
Collector-Base Voltage (BVCBO)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Emitter Voltage (BVCEO)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Collector Voltage (BVCC)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Emitter Voltage (BVEE)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Base Voltage (BVEBO)2 . . . . . . . . . . . . . . . . 5 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . .25 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Total Power Dissipation
Case Temperature £ 40°C3 . . . . . . . . . . . . . . . . . 1.8 W
Ambient Temperature £ 70°C4 . . . . . . . . . . . . . 500 mW
Operating Ambient Temperature . . . 55°C to +125°C
Operating Junction Temperature . . . 55°C to +150°C
Storage Temperature . . . . . . . . . .. . 65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . .+300°C
DICE Junction Temperature . . . . . . . 65°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BVEBO greater than the 5 V rating shown.
3Rating applies to applications using heat sinking to control case temperature.
Derate linearity at 16.4 mW/°C for case temperatures above 40°C.
4Rating applies to applications not using heat sinking; device in free air only. Derate
linearity at 6.3 mW/°C for ambient temperatures above 70°C.
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Emitter Voltage (BVCEO)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Collector-Collector Voltage (BVCC)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Emitter Voltage (BVEE)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V
Emitter-Base Voltage (BVEBO)2 . . . . . . . . . . . . . . . . 5 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . .25 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Total Power Dissipation
Case Temperature £ 40°C3 . . . . . . . . . . . . . . . . . 1.8 W
Ambient Temperature £ 70°C4 . . . . . . . . . . . . . 500 mW
Operating Ambient Temperature . . . 55°C to +125°C
Operating Junction Temperature . . . 55°C to +150°C
Storage Temperature . . . . . . . . . .. . 65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . .+300°C
DICE Junction Temperature . . . . . . . 65°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BVEBO greater than the 5 V rating shown.
3Rating applies to applications using heat sinking to control case temperature.
Derate linearity at 16.4 mW/°C for case temperatures above 40°C.
4Rating applies to applications not using heat sinking; device in free air only. Derate
linearity at 6.3 mW/°C for ambient temperatures above 70°C.
MAT01 Features
`Low VOS (VBE Match): 40 mV typ, 100 mV max
`Low TCVOS: 0.5 mV/8C max
`High hFE: 500 min
`Excellent hFE Linearity from 10 nA to 10 mA
`Low Noise Voltage: 0.23 mV p-p-0.1 Hz to 10 Hz
`High Breakdown: 45 V min
`Available in Die Form
`Low TCVOS: 0.5 mV/8C max
`High hFE: 500 min
`Excellent hFE Linearity from 10 nA to 10 mA
`Low Noise Voltage: 0.23 mV p-p-0.1 Hz to 10 Hz
`High Breakdown: 45 V min
`Available in Die Form
MAT01
PDF/DataSheet Download
- Datasheet: MAT01
- File Size: 122704 KB
- Manufacturer: AD [Analog Devices]
- Click here to Download
- ·MAT01AH
- AD [Analog Devices]
- Matched Monolithic Dual Transistor
- 122704 KB
- ·MAT01GH
- AD [Analog Devices]
- Matched Monolithic Dual Transistor
- 122704 KB
- ·MAT01N
- AD [Analog Devices]
- Matched Monolithic Dual Transistor
- 122704 KB
- ·MAT02
- AD [Analog Devices]
- Low Noise, Matched Dual Monolithic Transistor
- 270640 KB
- ·MAT02AH
- AD [Analog Devices]
- Low Noise, Matched Dual Monolithic Transistor
- 270640 KB
- ·MAT02EH
- AD [Analog Devices]
- Low Noise, Matched Dual Monolithic Transistor
- 270640 KB
- ·MAT02FH
- AD [Analog Devices]
- Low Noise, Matched Dual Monolithic Transistor
- 270640 KB
- ·MAT03
- AD [Analog Devices]
- Low Noise, Matched Dual PNP Transistor
- 260172 KB
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