MAX15018

The MAX15019 feature TTL-logic inputs. The drivers are available in the industry-standard 8-pin SO footprint and pin configuration with a thermally enhanced 8-pin SO package. The MAX15018A/MAX15019A both offer noninverting drivers. The MAX15018B/MAX15019B offer a noninverting high-side driver and an inverting low-side driver (see the Selector Guide.). The 125V maximum input voltage provides plenty of margin over the 100V input transient requirement of telecom standards.The MAX15018A/MAX15018B/MAX15019A/MAX15019B high-frequency, 125V half-bridge, n-channel MOSFET drivers drive highand low-side MOSFETs in high-voltage applications. These drivers are independently controlled, and their 35ns (typ)propagation delay, from input to output, are matched to within 2ns (typ). The high-voltage operation with very low and matched propagation delay between drivers, and high source-/sink-current capabilities in a thermally enhanced package make these devices suitable for high-power, high-frequency telecom power converters. A reliable on-chip bootstrap diode connected between VDD and BST eliminates the need for an external discrete diode. The MAX15018 feature CMOS (VDD/2)logic inputs. All devices operate over the -40°C to +125°C automotive temperature range.

The features of MAX15018 can be summarized as (1)HIP2100IB/HIP2101IB pin compatible; (2)up to 125V VIN operation; (3)8V to 12.6V VDD input supply range; (4)3A peak source and sink current; (5)35ns propagation delay; (6)guaranteed 8ns or less propagation delay matching between high-and low-side drivers; (7)both noninverting/noninverting and noninverting/inverting logic-input versions; (8)available; (9)up to 15V logic inputs, independent of VDD supply voltage; (10)low 8pF input capacitance; (11)available in CMOS (VDD/2)or TTL logic-level inputs with hysteresis; (12)available in a space-saving, thermally enhanced 8-pin SO-EP package.

The absolute maximum ratings of MAX15018 are (1)VDD to GND: -0.3V to +15V; (2)IN_H, IN_L to GND: -0.3V to +15V; (3)DL to GND: -0.3V to (VDD + 0.3V); (4)DH to HS: -0.3V to (VDD + 0.3V); (5)BST to HS: -0.3V to +15V; (6)HS to GND (repetitive transient): -5V to +130V; (7)HS dv/dt to GND: 50V/ns; (8)continuous power dissipation (TA = +70°C)single and multilayer board 8-Pin SO-EP (derate 23.8mW/°C above +70°C): 1.904W / JC: 6°C/W; (9)operating temperature: -40°C to +125°C; (10)maximum junction temperature: +150°C; (11)storage temperature range: -65°C to +150°C; (12)lead temperature (soldering, 10s): +300°C.