MB8117800A-70

The Fujitsu MB8117800A is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory cells accessible in 8-bit increments. The MB8117800A features a "fast page" mode of operation whereby highspeed random access of up to 1,024-bits of data within the same row can be selected. The MB8117800A DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory applications where very low power dissipation and high bandwidth are basic requirements of the design. Since the standby current of the MB8117800A is very small, the device can be used as a non-volatile memory in equipment that uses batteries for primary and/or auxiliary power.

The MB8117800A is fabricated using silicon gate CMOS and Fujitsu's advanced four-layer polysilicon and twolayer aluminum process. This process, coupled with advanced stacked capacitor memory cells, reduces the possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements for the MB8117800A are not critical and all inputs are TTL compatible.