Purchase MB81ES653225-12L, In-stock MB81ES653225-12L From SeekIC, PDF Datasheet Download.

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MB81ES653225-12L
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Description：
The Fujitsu MB81ES653225 is a Single Data Rate Interface Fast Cycle Random Access Me

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General Description

The Fujitsu MB81ES653225 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81ES653225 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.

The MB81ES653225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM) .

The MB81ES653225 is dedicated for SiP (System in a package) , and ideally suited for various embedded/ consumer applications including digital AVs and image processing where a large band width and low power consumption memory is needed.

* : FCRAM is a trademark of Fujitsu Limited, Japan.

Maximum Ratings

Parameter	Symbol	Rating		Unit
Parameter	Symbol	Min.	Max.	Unit
Supply Voltage Relative to VSS	V_DD, V_DDQ	− 0.5	+ 3.0	V
Voltage at Any Pin Relative to VSS	V_IN, V_OUT	− 0.5	+ 3.0	V
Short Circuit Output Current	I_OUT	− 50	+ 50	mA
Power Dissipation	P_D	—	1.0	W
Storage Temperature	T_STG	− 55	+ 125	°C

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

Features

• 1 M word × 32 bit × 2 banks organization
• Low power supply
   - VDD : + 1.8 V ± 0.15 V
   - VDDQ : + 1.8 V ± 0.15 V
• 1.8 V-CMOS I/O interface
• 8 K refresh cycles every 32 ms
• Auto-and Self-refresh
• Two banks operation
• Burst read/write operation and burst read/single write operation capability
• Programmable burst type, burst length, and CAS Latency
• Programmable page length function
• Programmable Partial Array Self Refresh (PASR)
• Programmable Temperature Compensated Self Refresh (TCSR)
• Deep power down mode
• Extended temperature operation
   - MB81ES653225-12 : From 0 °C to +85 °C (Ta)
   - MB81ES653225-12L : From −25 °C to +85 °C (Ta)
• CKE power down mode
• Output enable and input data mask
• Disable function for TEST
• Self burnin function for TEST
• Built In Self Test (BIST) function for TEST