Purchase MB82D01171B-60L, In-stock MB82D01171B-60L From SeekIC.
Part Number: MB82D01171B-60L
Description: The Fujitsu MB82D01171B is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Ran...
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MB82D01171B-60L
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General Description
MB82D01171B-60L General Description
The Fujitsu MB82D01171B is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. This MB82D01171B is suited for mobile applications such as Cellular Handset and PDA.
MB82D01171B-60L Maximum Ratings
| Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Voltage of VCCQ Supply Relative to VSS |
VCCQ |
0.5 |
+3.6 |
V |
| Voltage at Any Pin Relative to VSS |
VIN |
0.5 |
+3.6 |
V |
|
VOUT |
0.5 |
+3.6 |
mA | |
| Short Circuit Output Current |
IOUT |
-50 |
+50 |
W |
| Storage Temperature |
TSTG |
55 |
+125 |
°C |
MB82D01171B-60L Features
• Asynchronous SRAM Interface
• 1 M word ´ 16 bit Organization
• Fast Random Access Time : tAA = tCE = 60 ns, 70 ns
• Low Power Consumption : IDDS1 = 100 mA (L version) , 70 mA (LL version)
• Wide Operating Conditions : VDD = +2.3 V to +2.7 V
- +2.7 V to +3.1 V
- +3.1 V to +3.5 V
- TA = -30 °C to +85 °C
• Byte Write Control
• 8 words Address Access Capability
• Power Down Control by CE2
• 1 M word ´ 16 bit Organization
• Fast Random Access Time : tAA = tCE = 60 ns, 70 ns
• Low Power Consumption : IDDS1 = 100 mA (L version) , 70 mA (LL version)
• Wide Operating Conditions : VDD = +2.3 V to +2.7 V
- +2.7 V to +3.1 V
- +3.1 V to +3.5 V
- TA = -30 °C to +85 °C
• Byte Write Control
• 8 words Address Access Capability
• Power Down Control by CE2
MB82D01171B-60L Connection Diagram
MB82D01171B-60L
PDF/DataSheet Download
- Datasheet: MB82D01171B-60L
- File Size: 250326 KB
- Manufacturer: Fujitsu
- Click here to Download
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