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Part Number: MB82DP04184E
Description: The Fujitsu MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static R...
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MB82DP04184E
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DataSheet
General Description
MB82DP04184E General Description
The Fujitsu MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.
This MB82DP04184E is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan.
MB82DP04184E Maximum Ratings
| Parameter |
Symbol |
Value |
Unit | |
|
Min |
Max | |||
| Voltage of VDD Supply Relative to VSS* |
VDD |
− 0.5 |
+ 3.6 |
V |
| Voltage at Any Pin Relative to VSS* |
VIN, VOUT |
− 0.5 |
+ 3.6 |
V |
| Short Circuit Output Current |
IOUT |
− 50 |
+ 50 |
mA |
| Storage Temperature |
TSTG |
− 55 |
+ 125 |
oC |
MB82DP04184E Features
• Asynchronous SRAM Interface
• Fast Access Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V
• Wide Operating Temperature : TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 40 mA Max
IDDS1 = 200 A Max
• Various Power Down mode : Sleep
8M-bit Partial
16M-bit Partial
• Shipping Form : Wafer, Chip, 71-ball plastic FBGA
• Fast Access Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V
• Wide Operating Temperature : TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 40 mA Max
IDDS1 = 200 A Max
• Various Power Down mode : Sleep
8M-bit Partial
16M-bit Partial
• Shipping Form : Wafer, Chip, 71-ball plastic FBGA
MB82DP04184E-65L
PDF/DataSheet Download
- Datasheet: MB82DP04184E-65L
- File Size: 475886 KB
- Manufacturer: FUJITSU [Fujitsu Media Devices Limited]
- Click here to Download
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- HIGH FREQUENCY CERAMIC CAPACITORS
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