Purchase MB84SD23280FA, In-stock MB84SD23280FA From SeekIC.
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MB84SD23280FA
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DataSheet
General Description
MB84SD23280FA Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| Min. | Max. | |||
| Storage Temperature | Tstg | -40 | +125 | °C |
| Ambient Temperature with Power Applied | TA | -30 | +85 | °C |
| Voltage with Respect to Ground All pins * | VIN | -0.3 | VCCf + 0.1 | V |
| VOUT | -30 | VCCs + 0.1 | V | |
| VCCf Supply * | VCCf | -0.2 | +2.5 | V |
| VCCs Supply * | VCCs | -0.5 | +2.5 | V |
* : Minimum DC voltage on input or l/O pins are 0.5 V. During voltage transitions, inputs may negative overshoot
VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input and l/O pins are VCC +0.5 V. During voltage
transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
MB84SD23280FA Features
• Power supply voltage of 1.65 V to 1.95 V
• High performance
70 ns maximum access time (Flash)
70 ns maximum access time (SRAM)
• Operating Temperature
30 °C to +85 °C
• Package 73-ball FBGA
` FLASH MEMORY
• 0.17 mm process technology
• Simultaneous Read/Write operation (Dual Bank)
• FlexBankTM *1
Bank A: 16M bit (16KB * 4 and 64KB *31)
Bank B: 16M bit (64KB *32)
Bank C: 16M bit (64KB * 32)
Bank D: 16M bit (16KB *4 and 64KB *31)
• Minimum 100,000 program/erase cycles
• Sector Erase Architecture
Four 8K words, a hundred twenty-eight 32K words sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• WP Input Pin
At VIL, allows protection of all sectors, regardless of sector protection/unprotection status
At VIH, allows removal of sector protection
• Embedded EraseTM *2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
When address remain stable, the device automatically switches itself to low power mode
• Low VCC write inhibit
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
resumes the erase operation
• Sector Protection
Software command sector locking
• Please Refer to "MBM29BS64LF" Datasheet in Detailed Function
`SRAM
• Power Dissipation
Operating : 50 mA Max
Standby :15 A Max
• Power Down Features using CE1s and CE2s
• Data Retention Supply Voltage: 1.0 V to 1.95 V
• CE1s and CE2s Chip Select
• Byte Data Control: LB(DQ7 to DQ0), UB (DQ15 to DQ8)
*1: FlexBankTM is a trademark of Fujitsu Limited, Japan.
*2: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. SHDN
• High performance
70 ns maximum access time (Flash)
70 ns maximum access time (SRAM)
• Operating Temperature
30 °C to +85 °C
• Package 73-ball FBGA
` FLASH MEMORY
• 0.17 mm process technology
• Simultaneous Read/Write operation (Dual Bank)
• FlexBankTM *1
Bank A: 16M bit (16KB * 4 and 64KB *31)
Bank B: 16M bit (64KB *32)
Bank C: 16M bit (64KB * 32)
Bank D: 16M bit (16KB *4 and 64KB *31)
• Minimum 100,000 program/erase cycles
• Sector Erase Architecture
Four 8K words, a hundred twenty-eight 32K words sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• WP Input Pin
At VIL, allows protection of all sectors, regardless of sector protection/unprotection status
At VIH, allows removal of sector protection
• Embedded EraseTM *2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
When address remain stable, the device automatically switches itself to low power mode
• Low VCC write inhibit
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
resumes the erase operation
• Sector Protection
Software command sector locking
• Please Refer to "MBM29BS64LF" Datasheet in Detailed Function
`SRAM
• Power Dissipation
Operating : 50 mA Max
Standby :15 A Max
• Power Down Features using CE1s and CE2s
• Data Retention Supply Voltage: 1.0 V to 1.95 V
• CE1s and CE2s Chip Select
• Byte Data Control: LB(DQ7 to DQ0), UB (DQ15 to DQ8)
*1: FlexBankTM is a trademark of Fujitsu Limited, Japan.
*2: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. SHDN
MB84SD23280FA Connection Diagram
MB84SD23280FA
PDF/DataSheet Download
- Datasheet: MB84SD23280FA
- File Size: 438921 KB
- Manufacturer: SPANSION [SPANSION]
- Click here to Download
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- HIGH FREQUENCY CERAMIC CAPACITORS
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- ·MB80101DBN
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- ·MB80101FAN
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- HIGH FREQUENCY CERAMIC CAPACITORS
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- ·MB80101FBN
- MURATA [Murata Manufacturing Co., Ltd.]
- HIGH FREQUENCY CERAMIC CAPACITORS
- 246165 KB
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