Purchase MB8516S072CZ-102L, In-stock MB8516S072CZ-102L From SeekIC.
Part Number: MB8516S072CZ-102L
Description: The Fujitsu MB8516S072CZ is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Mod...
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MB8516S072CZ-102L
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General Description
MB8516S072CZ-102L General Description
The Fujitsu MB8516S072CZ is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of eighteen MB81F64842C devices which organized as four banks of 8 M× 8 bits and a 2Kbit serial EEPROM on a 168-pin glass-epoxy substrate.
The MB8516S072CZ features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.
The MB8516S072CZ is optimized for those applications requiring high speed, high performance and large memory storage, and high density memory organizations.
This module is ideally suited for workstations, PCs, laser printers, and other applications where a simple interface is needed.
MB8516S072CZ-102L Maximum Ratings
| Parameter |
Symbol |
Value |
Unit | |
|
Min. |
Max. | |||
| Supply Voltage* Input Voltage* Output Voltage* Storage Temperature Power Dissipation Output Current (D.C.) |
VCC VIN VOUT TSTG PD IOUT |
0.5 0.5 0.5 55 - 50 |
+4.6 +4.6 +4.6 +125 18 +50 |
V V V °C W mA |
MB8516S072CZ-102L Features
• Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)
• Conformed to JEDEC Standard (4 CLK)
• Organization: 16,777,216 words*72 bits
• Memory: MB81F64842C (8 M *8, 4-bank)* 18 pcs
• 3.3 V ±0.3 V Supply Voltage
• All input/output LVTTL compatible
• Conformed to Intel PC/100 spec
• 4096 Refresh Cycle every 65.6 ms
• Auto and Self Refresh
• CKE Power Down Mode
• DQM Byte Masking (Read/Write)
• Serial Presence Detect (SPD) with Serial EEPROM: Intel SPD spec Rev 1.2A Format
• Module size: 1.375" (height) ´ 5.25" (length)* 0.157" (thickness)
• Conformed to JEDEC Standard (4 CLK)
• Organization: 16,777,216 words*72 bits
• Memory: MB81F64842C (8 M *8, 4-bank)* 18 pcs
• 3.3 V ±0.3 V Supply Voltage
• All input/output LVTTL compatible
• Conformed to Intel PC/100 spec
• 4096 Refresh Cycle every 65.6 ms
• Auto and Self Refresh
• CKE Power Down Mode
• DQM Byte Masking (Read/Write)
• Serial Presence Detect (SPD) with Serial EEPROM: Intel SPD spec Rev 1.2A Format
• Module size: 1.375" (height) ´ 5.25" (length)* 0.157" (thickness)
MB8516S072CZ-102L
PDF/DataSheet Download
- Datasheet: MB8516S072CZ-102L
- File Size: 480784 KB
- Manufacturer: Fujitsu
- Click here to Download
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MB8516S072CZ-102L Relative Products
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The Fujitsu MB8516S072CZ-102 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of eighteen MB81F64842C devices which organized as four banks of 8 M× 8 bits and a 2Kbit serial EEPROM on a 168-pin glass-epoxy substrate...
MB8516S072CG-100L
The FujitsuMB8516S072CG-100L is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of eighteen MB81F64842C devices which organized as four banks of 8 M× 8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrat...
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The Fujitsu MB8516S072CG-100 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of eighteen MB81F64842C devices which organized as four banks of 8 M× 8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrat...
MB8516S064CZ-102
The FujitsuMB8516S064CZ-102 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of sixteen MB81F64842C devices which organized as four banks of 8 M ×8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrate....
MB8516S064CG100L
The Fujitsu MB8516S064CG100L is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of sixteen MB81F64842C devices which organized as four banks of 8 M× 8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrate...
MB8516S064CG-100
The Fujitsu MB8516S064CG-100 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of sixteen MB81F64842C devices which organized as four banks of 8 M× 8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrate...
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