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Part Number: MB85R1002
Description: The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words ...
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MB85R1002
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General Description
MB85R1002 General Description
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, MB85R1002 is able to retain data without back-up battery.
The memory cells used for the MB85R1002 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.
The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
MB85R1002 Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| Min. | Max. | |||
| Supply Voltage | VCC | -0.5 | +4.0 | V |
| Input Voltage | VIN | -0.5 | VCC + 0.5 | V |
| Output Voltage | VOUT | -0.5 | VCC + 0.5 | V |
| Ambient Operating Temperature | TA | -20 | +85 | °C |
| Storage Temperature | Tstg | -40 | +125 | °C |
MB85R1002 Features
• Bit configuration : 65,536 words x 16 bits
• Read/write endurance : 1010 times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : -20 °C to +85 °C
• LB and UB data byte control
• 48-pin, TSOP(1) plastic package
• Read/write endurance : 1010 times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : -20 °C to +85 °C
• LB and UB data byte control
• 48-pin, TSOP(1) plastic package
MB85R1002 Connection Diagram
MB85R1002
PDF/DataSheet Download
- Datasheet: MB85R1002
- File Size: 161379 KB
- Manufacturer: FUJITSU [Fujitsu Media Devices Limited]
- Click here to Download
- ·MB80101BAN
- MURATA [Murata Manufacturing Co., Ltd.]
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- ·MB80101CAN
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- ·MB80101CBN
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- ·MB80101DAN
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- ·MB80101DBN
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- ·MB80101FAN
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- ·MB80101FBN
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