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Part Number: MB85R256
Description: The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x...
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MB85R256
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General Description
MB85R256 General Description
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
MB85R256 Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| Min. | Max. | |||
| Supply Voltage | VCC | -0.5 | +4.0 | V |
| Input Voltage | VIN | -0.5 | VCC + 0.5 | V |
| Output Voltage | VOUT | -0.5 | VCC + 0.5 | V |
| Ambient Operating Temperature | TA | -40 | +85 | °C |
| Storage Temperature | Tstg | -40 | +85 | °C |
MB85R256 Features
• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: -40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: -40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package
MB85R256 Connection Diagram
MB85R256
PDF/DataSheet Download
- Datasheet: MB85R256
- File Size: 157103 KB
- Manufacturer: FUJI [Fuji Electric]
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