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Part Number: MB85R256A
Description: The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 wo...


Description: The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 wo...
The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM MB85R256/256A is able to retain data without back-up battery.
The memory cells used for the MB85R256/256A has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability.
The MB85R256/256A uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
|
Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Power supply voltage |
VCC |
0.5 |
+4.6 |
V |
| Input voltage |
VIN |
0.5 |
Vcc+0.5 |
V |
| Output voltage |
VOUT |
0.5 |
Vcc+0.5 |
V |
| Operating temperature |
TA |
40 |
+85 |
°C |
| Storage temperature |
Tstg |
40 |
+85 |
°C |
MB85R256A
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