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Part Number: MB85R256A

 

 

 

 

Description: The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 wo...


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MB85R256A General Description


The MB85R256/256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM MB85R256/256A is able to retain data without back-up battery.

The memory cells used for the MB85R256/256A has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability.

The MB85R256/256A uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

MB85R256A Maximum Ratings

Parameter
Conditions
Rating
Units
Min
Max
Power supply voltage
VCC
0.5
+4.6
V
Input voltage
VIN
0.5
Vcc+0.5
V
Output voltage
VOUT
0.5
Vcc+0.5
V
Operating temperature
TA
40
+85
°C
Storage temperature
Tstg
40
+85
°C

MB85R256A Features

• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: -40 °C to +85 °C
• 28-pin, SOP flat package

MB85R256A Connection Diagram

MB85R256A  Connection Diagram

MB85R256A datasheet

MB85R256A
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