Purchase MBM29DL64DF, In-stock MBM29DL64DF From SeekIC.
Part Number: MBM29DL64DF
Description: MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words o...
- Table of contents:
MBM29DL64DF
-
Suppliers
DataSheet
General Description
MBM29DL64DF General Description
MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations. This device is the almost identical to Fujitsu's standard 3 V only Flash memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank.
MBM29DL64DF Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit | |
|
Min. |
Max. | |||
|
Storage Temperature |
Tstg |
-55 |
+125 |
°C |
|
Ambient Temperature with Power Applied |
Ta |
-40 |
+85 |
°C |
|
Voltage with Respect to Ground All pins except A9, OE, and RESET *1,*2 |
VIN,VOUT |
-0.5 |
VCC + 0.5 |
V |
|
Power Supply Voltage *1 |
VCC |
-0.5 |
+4.0 |
V |
|
A9, OE, and RESET *1,*3 |
VIN |
-0.5 |
+13.0 |
V |
|
WP/ACC*1,*4 |
VACC |
-0.5 |
+10.5 |
V |
MBM29DL64DF Features
• 0.17 mm Process Technology
• Two-bank Architecture for Simultaneous Read/Program and Read/Erase
• FlexBankTM *1
Bank A : 8 Mbit (8 KB ´ 8 and 64 KB ´ 15)
Bank B : 24 Mbit (64 KB ´ 48)
Bank C : 24 Mbit (64 KB ´ 48)
Bank D : 8 Mbit (8 KB ´ 8 and 64 KB ´ 15)
Two virtual Banks are chosen from the combination of four
physical banks (Refer to "nFUNCTIONAL
DESCRIPTION FlexBankTM Architecture"and "Example of Virtual Banks Combination".)
Host system can program or erase in one bank, and then
read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
• Single 3.0 V Read, Program, and Erase
Minimized system level power requirements
• Compatible with JEDEC-standard Commands
Uses the same software commands as E2PROMs
• Compatible with JEDEC-standard Worldwide Pinouts
48-pin TSOP (1) (Package suffix : TN - Normal Bend Type)
48-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance 70 ns maximum access time
• Sector Erase Architecture
Sixteen 4 Kword and one hundred twenty-six 32 Kword sectors in word mode
Sixteen 8 Kbyte and one hundred twenty-six 64 Kbyte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• HiddenROM Region 256 byte of HiddenROM, accessible through
a new "HiddenROM Enable" command sequence Factory serialized and
protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin At VIL allows protection of "outermost" 2 ´ 8 Kbytes
on both ends of boot sectors, regardless of sector group
protection/unprotection status At VACC, increases program performance
• Embedded EraseTM *2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for program detection or erase cycle completion
• Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, the device
automatically switches itself to low power mode.
• Low VCC Write Inhibit £ 2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another byte
• Erase Suspend/Resume Suspends the erase operation to allow a read
data and/or program in another sector within the same device
• Sector Group Protection Hardware method disables any combination
of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary Sector Group Unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
• Two-bank Architecture for Simultaneous Read/Program and Read/Erase
• FlexBankTM *1
Bank A : 8 Mbit (8 KB ´ 8 and 64 KB ´ 15)
Bank B : 24 Mbit (64 KB ´ 48)
Bank C : 24 Mbit (64 KB ´ 48)
Bank D : 8 Mbit (8 KB ´ 8 and 64 KB ´ 15)
Two virtual Banks are chosen from the combination of four
physical banks (Refer to "nFUNCTIONAL
DESCRIPTION FlexBankTM Architecture"and "Example of Virtual Banks Combination".)
Host system can program or erase in one bank, and then
read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
• Single 3.0 V Read, Program, and Erase
Minimized system level power requirements
• Compatible with JEDEC-standard Commands
Uses the same software commands as E2PROMs
• Compatible with JEDEC-standard Worldwide Pinouts
48-pin TSOP (1) (Package suffix : TN - Normal Bend Type)
48-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance 70 ns maximum access time
• Sector Erase Architecture
Sixteen 4 Kword and one hundred twenty-six 32 Kword sectors in word mode
Sixteen 8 Kbyte and one hundred twenty-six 64 Kbyte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• HiddenROM Region 256 byte of HiddenROM, accessible through
a new "HiddenROM Enable" command sequence Factory serialized and
protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin At VIL allows protection of "outermost" 2 ´ 8 Kbytes
on both ends of boot sectors, regardless of sector group
protection/unprotection status At VACC, increases program performance
• Embedded EraseTM *2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for program detection or erase cycle completion
• Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, the device
automatically switches itself to low power mode.
• Low VCC Write Inhibit £ 2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another byte
• Erase Suspend/Resume Suspends the erase operation to allow a read
data and/or program in another sector within the same device
• Sector Group Protection Hardware method disables any combination
of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary Sector Group Unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
MBM29DL64DF Connection Diagram
MBM29DL64DF
PDF/DataSheet Download
- Datasheet: MBM29DL64DF
- File Size: 875052 KB
- Manufacturer: FUJITSU [Fujitsu Media Devices Limited]
- Click here to Download
- ·MBM100A6
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM100F12
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM150A6
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM150F12
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM200A6
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM2212-20
- FUJITSU [Fujitsu Media Devices Limited]
- MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
- 373835 KB
- ·MBM2212-25
- FUJITSU [Fujitsu Media Devices Limited]
- MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
- 373835 KB
- ·MBM2732-45
- Fujitsu
- 470965 KB
MBM29DL64DF Relative Products
MBM29DL640E
The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC sup...
MBM29DL400TC-90
The MBM29DL400TC-90 are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP(I) package. These devices are designed to be programmed in-system with the standa...
MBM29DL400TC-70
The MBM29DL400TC-70 are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP(I) package. These devices are designed to be programmed in-system with the standa...
MBM29DL400TC-55
The MBM29DL400TC-55 are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP(I) package. These devices are designed to be programmed in-system with the standa...
MBM29DL400TC-12
The MBM29DL400TC-12 are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP(I) package. These devices are designed to be programmed in-system with the standa...
MBM29DL400TC
The MBM29DL400TC/BC are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each or256K words of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP(I) package. These devicesare designed to be programmed in-system with the standard...
Hotspot Suppliers Product
ATTINY15-1PU
Price: 0.1-100 USD
SOIC8, low-power, CMOS 8-bit microcontroller, 3V, 1.6 MHz, RISC Architecture
C2012X7R1E105KT
Price: 0.01-0.02 USD
Multilayer Ceramic Chip Capacitor, MLCC, Low ESL, excellent frequency characteristics, 1uF
RB521ZS-30T2R
Price: 0.043-0.17 USD
RB521ZS-30T2R, Schottky Barrier Diode, Ultra small mold type, High reliability, 30V
AT49BV163D-70TU
Price: 1-1.1 USD
16-megabit (1M x 16/2M x 8), 3-volt Only Flash Memory, TSOP48, Low-power Operation
MC68EN360AI25L
Price: 0.1-0.1 USD
Communications Controller, PGA, 32-Bit, Background Debug Mode, Up to 32-Bit Data Bus
BD82HM55-SLGZS
Price: 15-20 USD
BD82HM55-SLGZS, Intel, BGA, 65nm, 3.5W, 25mm x 27 mm
DP83848CVV
Price: 2-3.5 USD
10/100 single port, Physical Layer device, QFP48, Low-power 3.3V, 0.18μm CMOS technology
LF398N
Price: 1-1.3 USD
Supply Voltage ±18V, Monolithic Sample-and-Hold Circuit, Power Dissipation 500 mW, 0.5 mV
M27C1001-70F1
Price: 1.4-1.44 USD
UV EPROM and OTP EPROM, –2 to 7 V, CDIP-32, low power consumption, 100μA, 1 Mbit, 35ns
MAX3232ESE
Price: 0.2-0.5 USD
RS-232, 16-SOIC, transceiver, 3 V ~ 5.5 V, RoHS Compliant, Low Supply Current
ADC1175CIMTC
Price: 1-2 USD
analog-to-digital converter, TSSOP, 6.5V, low power, Internal Sample-and-Hold Function
RS1D
Price: 0.0235-0.0286 USD
Surface Mount Fast Switching Rectifier, 1.0A, 200V, DO214AC/SMA, 150ns
