Purchase MBM29LV320TE 80, In-stock MBM29LV320TE 80 From SeekIC.
Part Number: MBM29LV320TE 80
Description: The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M ...
- Table of contents:
MBM29LV320TE 80
-
Suppliers
DataSheet
General Description
MBM29LV320TE 80 General Description
The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. The device is offered in a 48-pin TSOP (1) and 63-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microprocessors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE) and output enable (OE) controls.
MBM29LV320TE 80 Maximum Ratings
| Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Storage Temperature |
Tstg |
55 |
+125 |
°C |
| Ambient Temperature with Power Applied |
TA |
40 |
+85 |
°C |
| Voltage with Respect to Ground All Pins except A9, OE, RESET *1, *2 |
VIN, VOUT |
0.5 |
VCC+0.5 |
V |
| Power Supply Voltage *1 |
VCC |
0.5 |
+4.0 |
V |
| A9, OE, and RESET *1, *3 |
VIN |
0.5 |
+13.0 |
V |
| WP/ACC *1, *4 |
VACC |
0.5 |
+10.5 |
V |
MBM29LV320TE 80 Features
• 0.23 mm Process Technology
• Single 3.0 V Read, Program, and Erase Minimized system level power requirements
• Compatible with JEDEC-standard Commands Use the same software commands as E2PROMs
• Compatible with JEDEC-standard Worldwide Pinouts
-48-pin TSOP (1) (Package suffix : TN - Normal Bend Type, TR - Reversed Bend Type)
-63-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance 80 ns maximum access time
• Sector Erase Architecture
-Eight 4 K word and sixty-three 32 K word sectors in word mode
-Eight 8 K byte and sixty-three 64 K byte sectors in byte mode
-Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture T = Top sector B = Bottom sector
• HiddenROM Region
-256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
-At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
-At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same
• Sector group protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
• Single 3.0 V Read, Program, and Erase Minimized system level power requirements
• Compatible with JEDEC-standard Commands Use the same software commands as E2PROMs
• Compatible with JEDEC-standard Worldwide Pinouts
-48-pin TSOP (1) (Package suffix : TN - Normal Bend Type, TR - Reversed Bend Type)
-63-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance 80 ns maximum access time
• Sector Erase Architecture
-Eight 4 K word and sixty-three 32 K word sectors in word mode
-Eight 8 K byte and sixty-three 64 K byte sectors in byte mode
-Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture T = Top sector B = Bottom sector
• HiddenROM Region
-256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
-At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
-At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same
• Sector group protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
MBM100A6
PDF/DataSheet Download
- Datasheet: MBM100A6
- File Size: 79491 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
- ·MBM100F12
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM150A6
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM150F12
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM200A6
- HITACHI [Hitachi Semiconductor]
- IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
- 79491 KB
- ·MBM2212-20
- FUJITSU [Fujitsu Media Devices Limited]
- MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
- 373835 KB
- ·MBM2212-25
- FUJITSU [Fujitsu Media Devices Limited]
- MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
- 373835 KB
- ·MBM2732-45
- Fujitsu
- 470965 KB
- ·MBM2764
- FUJITSU [Fujitsu Media Devices Limited]
- UV ERASABLE 65536-BIT READ ONLY MEMORY
- 589903 KB
MBM29LV320TE 80 Relative Products
MBM29LV200TC-70
The MBM29LV200TC-70 are a 8M-bit, 3.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The MBM29LV200TC/BC are offered in 48-pin TSOP(I) and 44-pin SOP packages. These devices are designed to be programmed in-system w...
MBM29LV200TC-12
The MBM29LV200TC series are a 8M-bit, 3.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The MBM29LV200TC are offered in 48-pin TSOP(I) and 44-pin SOP packages. These devices are designed to be programmed in-system ...
MBM29LV200TC
The MBM29LV200TC/BC are a 8M-bit, 3.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The MBM29LV200TC/BC are offered in 48-pin TSOP(I) and 44-pin SOP packages. These devices are designed to be programmed in-system w...
MBM29LV200BC
The MBM29LV200BC are a 8M-bit, 3.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The MBM29LV200TC/BC are offered in 48-pin TSOP(I) and 44-pin SOP packages. These devices are designed to be programmed in-system with...
MBM29LV160TM/BM 90
The MBM29LV160TM/BM 90 is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V ...
MBM29LV160TE-90
The MBM29LV160TE-90 is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in...
Hotspot Suppliers Product
PKA2323PI
Price: 0.1-0.2 USD
25–40 W, DC/DC Power Module, DIP, – 0.5 to 36 Vdc, Single, dual and triple output
tda8560q
Price: 1.9-2.1 USD
class-B output audio amplifer, ZIP-13, 18 V, 55W, 2-Channel (Stereo), 2 x 40 W/2
G6M-1A-DC24V
Price: 1.2-1.4 USD
PCB Power Relay, Slim 5-mm width, RoHS Compliant, 10 ms Operate time, 5 ms Release time, 100 mΩ Co...
AD22057RZ-RL
Price: 0.1-5 USD
single-supply difference amplifier, SOP, +3.0 V to +36 V, 400 kΩ, 40 ms
BQ2018TS-E1TR
Price: 1.25-1.25 USD
low-cost, charge/discharge counter, 8-pin TSSOP or SOIC
HI3110ERQC
Price: 10.58-11.05 USD
QFP, Hirose Electric, HI3110ERQC, Integrated Circuits
BTS5210L
Price: 1.5-2 USD
IC HIGH SIDE PWR SWITCH PDSO-12 - BTS5210L
SDA9380 C21
Price: 2.34-3.13 USD
highly integrated deflection controller, RGB video processor, MQFP, -0.3 to 9V
LM239
Price: 0.3-0.8 USD
Low Power, Low Offset Voltage, Quad Comparator, SOP14, 2 to 36 VDC, 1050 mW
LT3501EFE
Price: 2-2.1 USD
3A, Regulator, 20-lead TSSOP
MC9S12XET512VAL
Price: 1-100 USD
QFP, micro controller, –0.3 to 0.3 V, 16-Bit CPU12X, memory protection unit
HD6432655FA00
Price: 6.75-6.85 USD
16-bit, single-chip, microcomputer, QFP128, 7.0 V, Priorities settable, ICR, DTC and DMAC control
