Purchase MBM29LV650UE90, In-stock MBM29LV650UE90 From SeekIC.
Part Number: MBM29LV650UE90
Description: The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. Th...
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MBM29LV650UE90
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DataSheet
General Description
MBM29LV650UE90 General Description
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable(OE) controls.
MBM29LV650UE90 Maximum Ratings
| Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Storage Temperature |
Tstg |
55 |
+125 |
°C |
| Ambient Temperature with Power Applied |
TA |
40 |
+85 |
°C |
| Voltage with Respect to Ground All Pins except A9,OE, RESET *1, *2 |
VIN, VOUT |
0.5 |
VCC+0.5 |
V |
| Power Supply Voltage *1 |
VCC |
0.5 |
+4.0 |
V |
| A9, OE, and RESET *1, *3 |
VIN |
0.5 |
+13.0 |
V |
| WP/ACC *1, *4 |
VACC |
0.2 |
+7.0 |
V |
MBM29LV650UE90 Features
• 0.23 mm Process Technology
• Single 3.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standards Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts 48-pin TSOP (1) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance 90 ns maximum access time
• Flexible sector architecture 128 32 K word sectors Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• HiddenROM region
-128 words of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
-At VIL, allows protection of first or last 32 K word sector, regardless of sector protection/unprotection status
-At VIH, allows removal of protection
-MBM29LV650UE: has the function to protect the last 32 K word sector (SA 127).
-MBM29LV651UE: has the function to protect the first 32 K word sector (SA 0).
• ACC input pin At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
-Temporary sector group unprotection via the RESET pin
-This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
• Single 3.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standards Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts 48-pin TSOP (1) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance 90 ns maximum access time
• Flexible sector architecture 128 32 K word sectors Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• HiddenROM region
-128 words of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
-At VIL, allows protection of first or last 32 K word sector, regardless of sector protection/unprotection status
-At VIH, allows removal of protection
-MBM29LV650UE: has the function to protect the last 32 K word sector (SA 127).
-MBM29LV651UE: has the function to protect the first 32 K word sector (SA 0).
• ACC input pin At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
-Temporary sector group unprotection via the RESET pin
-This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
MBM29LV650UE90 Connection Diagram
MBM29LV650UE90
PDF/DataSheet Download
- Datasheet: MBM29LV650UE90
- File Size: 653263 KB
- Manufacturer: Fujitsu
- Click here to Download
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