Purchase MBM29PL32TM/BM 90/10, In-stock MBM29PL32TM/BM 90/10 From SeekIC.
Part Number: MBM29PL32TM/BM 90/10
Description: The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words b...
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MBM29PL32TM/BM 90/10
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DataSheet
General Description
MBM29PL32TM/BM 90/10 General Description
The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29PL32TM/BM 90/10 Maximum Ratings
| Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Storage Temperature |
Tstg |
55 |
+125 |
°C |
| Ambient Temperature with Power Applied |
TA |
40 |
+85 |
°C |
| Voltage with Respect to Ground All Pins except A9, OE, RESET *1, *2 |
VIN, VOUT |
0.5 |
VCC+0.5 |
V |
| Power Supply Voltage *1 |
VCC |
0.5 |
+4.0 |
V |
| A9, OE, and RESET *1, *3 |
VIN |
0.5 |
+12.5 |
V |
MBM29PL32TM/BM 90/10 Features
• 0.23 mm Process Technology
• Single 3.0 V read, program and erase Minimizes system level power requirements
• Industry-standard pinouts
-48-pin TSOP (1) (Package suffix: TN - Normal Bend Type)
-48-ball FBGA(Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance Page mode Fast 8 bytes / 4 words access capablilty
• Sector erase architecture
-Eight 8K byte and sixty-three 64K byte sectors
-Eight 4K word and sixty-three 32K word sectors
-Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
-T = Top sector
-B = Bottom sector
• HiddenROM
-256 bytes / 128 words of HiddenROM, accessible through a "HiddenROM Entry" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin At VIL, allows protection of outermost two 8K bytes / 4K words sectors, regardless of sector protection/unprotection status At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Program Suspend/Resume Suspends the program operation to allow a read in another address
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector Group Protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
-Temporary sector group unprotection via the RESET pin
-This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
• Single 3.0 V read, program and erase Minimizes system level power requirements
• Industry-standard pinouts
-48-pin TSOP (1) (Package suffix: TN - Normal Bend Type)
-48-ball FBGA(Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance Page mode Fast 8 bytes / 4 words access capablilty
• Sector erase architecture
-Eight 8K byte and sixty-three 64K byte sectors
-Eight 4K word and sixty-three 32K word sectors
-Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
-T = Top sector
-B = Bottom sector
• HiddenROM
-256 bytes / 128 words of HiddenROM, accessible through a "HiddenROM Entry" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin At VIL, allows protection of outermost two 8K bytes / 4K words sectors, regardless of sector protection/unprotection status At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Program Suspend/Resume Suspends the program operation to allow a read in another address
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector Group Protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
-Temporary sector group unprotection via the RESET pin
-This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
MBM29PL32TM/BM 90/10 Connection Diagram
MBM100A6
PDF/DataSheet Download
- Datasheet: MBM100A6
- File Size: 79491 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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