Purchase MBM29QM96DF-65/80, In-stock MBM29QM96DF-65/80 From SeekIC.
Part Number: MBM29QM96DF-65/80
Description: The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words...
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MBM29QM96DF-65/80
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DataSheet
General Description
MBM29QM96DF-65/80 General Description
The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.
MBM29QM96DF-65/80 Maximum Ratings
| Parameter |
Conditions |
Rating |
Units | |
|
Min |
Max | |||
| Storage Temperature |
Tstg |
55 |
+125 |
°C |
| Ambient Temperature with Power Applied |
TA |
40 |
+85 |
°C |
| Voltage with Respect to Ground All Pins except A9, OE,RESET *1, *2 |
VIN, VOUT |
0.5 |
VCC+0.5 |
V |
| Power Supply Voltage *1 |
VCC |
0.5 |
+4.0 |
V |
| A9, OE, and RESET *1, *3 |
VIN |
0.5 |
+13.0 |
V |
| WP/ACC *1, *4 |
VACC |
0.5 |
+10.5 |
V |
MBM29QM96DF-65/80 Features
• 0.17 mm Process Technology
• Single 3.0 V Read, Program and Erase Minimized system level power requirements
• Simultaneous Read/Write (Program and Erase) Operations (Dual Bank)
• FlexBankTM*1
-Bank A: 12 Mbit (4K words ´ 8 and 32K words ´ 23)
-Bank B: 36 Mbit (32K words ´ 72)
-Bank C: 36 Mbit (32K words ´ 72)
-Bank D: 12 Mbit (4K words ´ 8 and 32K words ´ 23)
• Enhanced VI/O (VCCQ) Feature
-Input/Output voltage generated on the device is determined based on the VI/O level
• High Performance Page Mode
-25 ns maximum page access time (65 ns random access time)
• 8 Words Page Size
• Compatible with JEDEC-Standard Commands Uses same software commands as E2PROMs
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
-Eight 4K words, a hundred ninety 32K words, eight 4K words sectors
-Any combination of sectors can be concurrently erased. Also supports full chip erase
• Dual Boot Block
-16 by 4K words bootblock sectors, 8 at the top of the address range and 8 at the bottom of the address range
• HiddenROM Region
-256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
-At VIL, allows protection of "outermost" 2 ´ 4K words on both ends of boot sectors, regardless of sector
-protection/unprotection status
-At VIH, allows removal of boot sector protection
-At VACC, increases program performance
• Embedded EraseTM*2 Algorithms Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM*2 Algorithms Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit Feature for detection of program or erase cycle completion
• Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, the device automatically switches itself to low power mode.
• Low VCC Write Inhibit £ VLKO
• Program Suspend/Resume Suspends the program operation to allow a read in another word
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Memory Interface)
• Hardware Reset Pin (RESET) Hardware method to reset the device for reading array data
• New Sector Protection
-Persistent Sector Protection
-Password Sector Protection
• Single 3.0 V Read, Program and Erase Minimized system level power requirements
• Simultaneous Read/Write (Program and Erase) Operations (Dual Bank)
• FlexBankTM*1
-Bank A: 12 Mbit (4K words ´ 8 and 32K words ´ 23)
-Bank B: 36 Mbit (32K words ´ 72)
-Bank C: 36 Mbit (32K words ´ 72)
-Bank D: 12 Mbit (4K words ´ 8 and 32K words ´ 23)
• Enhanced VI/O (VCCQ) Feature
-Input/Output voltage generated on the device is determined based on the VI/O level
• High Performance Page Mode
-25 ns maximum page access time (65 ns random access time)
• 8 Words Page Size
• Compatible with JEDEC-Standard Commands Uses same software commands as E2PROMs
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
-Eight 4K words, a hundred ninety 32K words, eight 4K words sectors
-Any combination of sectors can be concurrently erased. Also supports full chip erase
• Dual Boot Block
-16 by 4K words bootblock sectors, 8 at the top of the address range and 8 at the bottom of the address range
• HiddenROM Region
-256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
-At VIL, allows protection of "outermost" 2 ´ 4K words on both ends of boot sectors, regardless of sector
-protection/unprotection status
-At VIH, allows removal of boot sector protection
-At VACC, increases program performance
• Embedded EraseTM*2 Algorithms Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM*2 Algorithms Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit Feature for detection of program or erase cycle completion
• Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, the device automatically switches itself to low power mode.
• Low VCC Write Inhibit £ VLKO
• Program Suspend/Resume Suspends the program operation to allow a read in another word
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Memory Interface)
• Hardware Reset Pin (RESET) Hardware method to reset the device for reading array data
• New Sector Protection
-Persistent Sector Protection
-Password Sector Protection
MBM29QM96DF-65/80 Connection Diagram
MBM100A6
PDF/DataSheet Download
- Datasheet: MBM100A6
- File Size: 79491 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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