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Part Number: MBM29SL800TD

 

 

 

 

Description: The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512...


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MBM29SL800TD General Description


The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be repro-grammed in standard EPROM programmers.

MBM29SL800TD Maximum Ratings

Symbol Parameter Rating Unit
min. max.
Tstg Storage Temperature -55 +125
TA Ambient Temperature with Power Applied -40 +85
VIN, VOUT Voltage with Respect to Ground All pins except A9,
OE, and RESET *1, *2
-0.5 VCC + 0.5 V
VIN A9, OE, and RESET *1, *3 -0.5 +11.5 V
VCC Power Supply Voltage *1 -0.5 +3.0 V

*1: Voltage is defined on the basis of VSS = GND = 0 V.
*2:Minimum DC voltage on input or I/O pins is −0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to −2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods of up to 20 ns.
*3:Minimum DC input voltage on A9, OE and RESET pins is −0.5 V. During voltage transitions, A9, OE and RESET pins may undershoot VSS to −2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN - VCC) does not exceed +9.0 V. Maximum DC input voltage on A9, OE and RESET pins is +11.5 V which may overshoot to +12.5 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,  temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

MBM29SL800TD Features

• Single 1.8 V read, program, and erase
   Minimizes system level power requirements
• Compatible with JEDEC-standard commands
   Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
   48-pin TSOP (I)  (Package suffix : TN − Normal Bend Type, TR − Reversed Bend Type)
   48-ball FBGA (Package suffix : PBT)
   48-ball SCSP (Package suffix : PW)
• Minimum 100,000 program/erase cycles
• High performance
   100 ns maximum access time
• Sector erase architecture
   One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode
   One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes sectors in byte mode
   Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
   T = Top sector
   B = Bottom sector
• Embedded EraseTM Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
   Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY) 
   Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switch themselves to low power mode
• Erase Suspend/Resume
   Suspends the erase operation to allow a read in another sector within the same device
• Sector protection
   Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector Protect command
• Fast programming Function by Extended Command
• Temporary sector unprotection
   Temporary sector unprotection via the RESET pin

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

MBM29SL800TD datasheet

MBM29SL800TD- 10
PDF/DataSheet Download

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