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MFG:DIODES Package Cooled:558 D/C:IC
- Table of contents:
MBR1050
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Suppliers
DataSheet
General Description
MBR1050 Maximum Ratings
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
| Type Number | Symbo | MBR 1035 |
MBR 1045 |
MBR 1050 |
MBR 1060 |
MBR 1090 |
MBR 10100 |
MBR 10200 |
Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 35 | 45 | 50 | 60 | 90 | 100 | 200 | V |
| Maximum RMS Voltage | VRMS | 24 | 31 | 35 | 42 | 63 | 70 | 140 | V |
| Maximum DC Blocking Voltage | VDC | 35 | 45 | 50 | 60 | 90 | 100 | 200 | V |
| Maximum Average Forward Rectified Current See Fig. 1 |
I(AV) | 10 | A | ||||||
| Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=135 |
IFRM | 20.0 | A | ||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM | 150 | A | ||||||
| Peak Repetitive Reverse Surge Current (Note 1) | IRRM | 1.0 | 0.5 | A | |||||
| Voltage Rate of Change (Rated VR) | dV/dt | 10,000 | V/uS | ||||||
| Maximum Instantaneous Forward Voltage at (Note 2) IF=10A, Tc=25 IF=10A, Tc=125 IF=20A, Tc=25 IF=20A, Tc=125 |
VF | 0.70 0.57 0.84 0.72 |
0.80 0.70 0.95 0.85 |
0.85 0.71 - - |
1.05 - - |
V | |||
| Maximum Instantaneous Reverse Current @ Tc =25at Rated DC Blocking Voltage (Note 2) @ Tc=125 |
IR | 0.1 15.0 |
0.1 6.0 |
0.009 10 |
mA mA | ||||
| Typical Junction Capacitance (Note 3) | Cj | 350 | 280 | 200 | pF | ||||
| Maximum Thermal Resistance, Junction to Case | RJC | 3.5 | 2.0 | /W | |||||
| Operating Junction Temperature Range | TJ | -65 to +150 | |||||||
| Storage Temperature Range | TSTG | -65 to +175 | |||||||
MBR1050 Features
`Plastic material used carries Underwriters Laboratory
Classifications 94V-0
` Metal silicon junction, majority carrier conduction
` Low power loss, high efficiency
` High current capability, low forward voltage drop
` High surge capability
` For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
` Guardring for overvoltage protection
` High temperature soldering guaranteed:
260oC/10 seconds,0.25"(6.35mm)from case
Classifications 94V-0
` Metal silicon junction, majority carrier conduction
` Low power loss, high efficiency
` High current capability, low forward voltage drop
` High surge capability
` For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
` Guardring for overvoltage protection
` High temperature soldering guaranteed:
260oC/10 seconds,0.25"(6.35mm)from case
MBR1050
PDF/DataSheet Download
- Datasheet: MBR1050
- File Size: 60010 KB
- Manufacturer: GE [General Semiconductor]
- Click here to Download
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MBR1045
MBR1045 thru MBR1060 datasheet
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