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Part Number: MBR16Hxx

 

 

 

 

 

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MBR16Hxx Maximum Ratings

Parameter

Symbol

MBR16H35

MBR16H45

MBR16H50

MBR16H60

Unit

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

V

Working peak reverse voltage

VRWM

35

45

50

60

V

Maximum DC blocking voltage

VDC

35

45

50

60

V

Max.average forward rectified current (see fig.1)

IF(AV)

16

A

Peak repetitive forward current at TC= 150 °C
(rated VR, 20 KHz sq.wave)

IFRM

32

A

Non-repetitive avalanche energy
at 25 °C, IAS= 4 A, L = 10 mH

EAS

80

mJ

Peak forward surge current 8.3 ms single half sinewave
superimposed on rated load (JEDEC Method)

IFSM

150

A

Peak repetitive reverse surge current
at tp= 2.0 µs, 1 KHZ

IRRM

1.0

0.5

A

Peak non-repetitive reverse energy (8/20 µs waveform)

ERSM

20

mJ

Electrostatic discharge capacitor voltage
Human body model:C = 100 pF, R = 1.5 kΩ

VC

25

kV

Voltage rate of change (rated VR)

dv/dt

10,000

V/µs

Operating junction temperature range

TJ

65 to +175

°C

Storage temperature range

TSTG

65 to +175

°C

RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH 30%

VISOL

4500(1)
3500(2)
1500(3)

V

MBR16Hxx Features

• Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• High temperature soldering guaranteed: 250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature

MBR16Hxx datasheet

MBR16HXX
PDF/DataSheet Download

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