Purchase MBR2030CTL, In-stock MBR2030CTL From SeekIC.
MFG:ON D/C:06+
- Table of contents:
MBR2030CTL
-
Suppliers
DataSheet
General Description
MBR2030CTL Maximum Ratings
| Rating | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
30 | V |
| Average Rectified Forward Current | IF(AV) | 10 | A |
| Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM | 150 | A |
| Peak Repetitive Reverse Surge Current (2.0s, 1.0 kHz) | IRRM | 1.0 | A |
| Operating Junction Temperature | TJ | -65 to +150 | °C |
| Storage Temperature | Tstg | -65 to +175 | °C |
| Voltage Rate of Change (Rated VR) | dv/dt | 1000 | V/s |
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
MBR2030CTL Features
• Pb−Free Package is Available*
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
• 150°C Operating Junction Temperature
• Matched Dual Die Construction (10 A per Leg or 20 A per Package)
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
• 150°C Operating Junction Temperature
• Matched Dual Die Construction (10 A per Leg or 20 A per Package)
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL 94, V−0 @ 0.125 in
MBR2030CTL
PDF/DataSheet Download
- Datasheet: MBR2030CTL
- File Size: 73211 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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